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Analog Devices LT8302 | Demoboard RD002

6 W Unipolar isolated auxiliary supply for SiC-MOSFET & IGBT gate driver

Overview

TopologyFlyback Converter
Input voltage9-18 V
Switching frequency80-360 kHz
Output 120 V / 0.4 A

Description

This reference design presents an auxiliary power supply providing a unipolar output voltage adjustable between 15 V and 20 V with a maximum output power of 6 W. The optimized design is for driving high-voltage SiC-MOSFET and IGBT discrete devices as well as power modules in high power converters. The output voltage range covers the requiremens of different devices, and the design can be easiliy integrated in the gate driver system. In addition to the compact size and high efficiency, one of the main features of the design is the extremely low interwinding capacitance of the WE-AGDT 750318114 transformer down to 6.8 pF, which helps to achieve high CMTI rating (Common-Mode Transient Immunity). A high CMTI enables faster switching transitions without compromising the functionality of the system, helping to achieve smaller system size and higher efficiency of the high power converter, as demanded by trending applications in areas like e-mobility, renewable energy and industrial automation.

Features

  • 3V to 42V Input Voltage Range
  • 3.6A, 65V Internal DMOS Power Switch
  • Low Quiescent Current:
  • 106µA in Sleep Mode
  • 380µA in Active Mode
  • Quasi-Resonant Boundary Mode Operation at Heavy Load
  • Low Ripple Burst Mode® Operation at Light Load
  • Minimum Load < 0.5% (Typ) of Full Output
  • No Transformer Third Winding or Opto-Isolator Required for Output Voltage Regulation
  • Accurate EN/UVLO Threshold and Hysteresis
  • Internal Compensation and Soft-Start
  • Temperature Compensation for Output Diode
  • Output Short-Circuit Protection
  • Thermally Enhanced 8-Lead SO Package
  • AEC-Q100 Qualified for Automotive Applications

Typical applications

  • Isolated Automotive, Industrial, Medical Power Supplies, Isolated Auxiliary/Housekeeping Power Supplies

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
Tol. C
VR(V (DC))
Size
Operating Temperature
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
VIN(V)
VOut1(V)
VOut2(V)
PO(W)
CWW 1(pF)
L(µH)
ISAT(A)
fswitch(kHz)
n
Version
IC Reference
SamplesAvailability & Sample
SPECWCAP-CSGP MLCCs 50 V(DC), 470 pF, ±10%
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance470 pF
Capacitance±10% 
Rated Voltage50 V (DC)
Size0805 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor2.5 %
Insulation Resistance10 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height0.8 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Check availability
SPECWCAP-CSGP MLCCs 50 V(DC), 1 µF, ±10%
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Capacitance±10% 
Rated Voltage50 V (DC)
Size0805 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor10 %
Insulation Resistance0.1 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
Check availability
SPECWCAP-CSGP MLCCs 50 V(DC), 10 µF, ±10%
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 µF
Capacitance±10% 
Rated Voltage50 V (DC)
Size1206 
Operating Temperature -55 °C up to +85 °C
Dissipation Factor10 %
Insulation Resistance0.005 GΩ
Ceramic TypeX5R Class II 
Length3.2 mm
Width1.6 mm
Height1.6 mm
Pad Dimension0.6 mm
Packaging7" Tape & Reel 
Check availability
SPECWE-AGDT Auxiliary Gate Drive Transformer, –, –
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
SizeEP7 
Operating Temperature -40 °C up to +130 °C
Length11.3 mm
Width10.95 mm
Height11.94 mm
Input Voltage 9 - 18
Output Voltage 115 V
Output Voltage 2-4 V
Total Output Power6 W
Interwinding Capacitance7.5 pF
Inductance7 µH
Saturation Current5 A
Switching Frequency 350
Turns Ratio2.25:3.5:1 
VersionFlyback 
IC ReferenceLT8302 
Check availability
SPECWE-AGDT Auxiliary Gate Drive Transformer, –, –
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
SizeEP7 
Operating Temperature -40 °C up to +130 °C
Length11.3 mm
Width10.95 mm
Height11.94 mm
Input Voltage 9 - 18
Output Voltage 119 V
Total Output Power6 W
Interwinding Capacitance6.8 pF
Inductance6 µH
Saturation Current6.2 A
Switching Frequency 350
Turns Ratio1:2 
VersionFlyback 
IC ReferenceLT8302 
Check availability
SPECWE-AGDT Auxiliary Gate Drive Transformer, –, –
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
SizeEP7 
Operating Temperature -40 °C up to +130 °C
Length11.3 mm
Width10.95 mm
Height11.94 mm
Input Voltage 9 - 18
Output Voltage 119 V
Output Voltage 24 V
Total Output Power6 W
Interwinding Capacitance7.5 pF
Inductance7 µH
Saturation Current4.5 A
Switching Frequency 350
Turns Ratio2.25:4.25:1 
VersionFlyback 
IC ReferenceLT8302 
Check availability
SPECWE-AGDT Auxiliary Gate Drive Transformer, –, –
Simu­lation
Availability
Status Activei| Production is active. Expected lifetime: >10 years.
SizeEP7 
Operating Temperature -40 °C up to +130 °C
Length11.3 mm
Width10.95 mm
Height11.94 mm
Input Voltage 9 - 18
Output Voltage 120 V
Output Voltage 25 V
Total Output Power6 W
Interwinding Capacitance7.3 pF
Inductance7 µH
Saturation Current4.5 A
Switching Frequency 350
Turns Ratio1.8:3.6:1 
VersionFlyback 
IC ReferenceLT8302 
Check availability