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Analog Devices LT8302 | Demoboard RD002
6 W Unipolar isolated auxiliary supply for SiC-MOSFET & IGBT gate driver
Details
| Topologie | Sperrwandler |
| Eingangsspannung | 9-18 V |
| Schaltfrequenz | 80-360 kHz |
| Ausgang 1 | 20 V / 0.4 A |
Beschreibung
This reference design presents an auxiliary power supply providing a unipolar output voltage adjustable between 15 V and 20 V with a maximum output power of 6 W. The optimized design is for driving high-voltage SiC-MOSFET and IGBT discrete devices as well as power modules in high power converters. The output voltage range covers the requiremens of different devices, and the design can be easiliy integrated in the gate driver system. In addition to the compact size and high efficiency, one of the main features of the design is the extremely low interwinding capacitance of the WE-AGDT 750318114 transformer down to 6.8 pF, which helps to achieve high CMTI rating (Common-Mode Transient Immunity). A high CMTI enables faster switching transitions without compromising the functionality of the system, helping to achieve smaller system size and higher efficiency of the high power converter, as demanded by trending applications in areas like e-mobility, renewable energy and industrial automation.
Eigenschaften
- 3V to 42V Input Voltage Range
- 3.6A, 65V Internal DMOS Power Switch
- Low Quiescent Current:
- 106µA in Sleep Mode
- 380µA in Active Mode
- Quasi-Resonant Boundary Mode Operation at Heavy Load
- Low Ripple Burst Mode® Operation at Light Load
- Minimum Load < 0.5% (Typ) of Full Output
- No Transformer Third Winding or Opto-Isolator Required for Output Voltage Regulation
- Accurate EN/UVLO Threshold and Hysteresis
- Internal Compensation and Soft-Start
- Temperature Compensation for Output Diode
- Output Short-Circuit Protection
- Thermally Enhanced 8-Lead SO Package
- AEC-Q100 Qualified for Automotive Applications
Typische Anwendungen
- Isolated Automotive, Industrial, Medical Power Supplies, Isolated Auxiliary/Housekeeping Power Supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | Vin(V) | VOut1(V) | VOut2(V) | PO(W) | CWW 1(pF) | L(µH) | ISAT(A) | fswitch(kHz) | n | Version | IC-Referenz | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 470 pF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität470 pF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0805 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor2.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge2 mm | Breite1.25 mm | Höhe0.8 mm | Pad Dimension0.5 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 50 V(DC), 1 µF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität1 µF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0805 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor10 % | Isolationswiderstand0.1 GΩ | KeramiktypX7R Klasse II | Länge2 mm | Breite1.25 mm | Höhe1.25 mm | Pad Dimension0.5 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 50 V(DC), 10 µF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität10 µF | Kapazität±10% | Nennspannung50 V (DC) | Bauform1206 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor10 % | Isolationswiderstand0.005 GΩ | KeramiktypX5R Klasse II | Länge3.2 mm | Breite1.6 mm | Höhe1.6 mm | Pad Dimension0.6 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WE-AGDT Auxiliary Gate Drive Transformer, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-AGDT Auxiliary Gate Drive Transformer | – | – | – | BauformEP7 | Betriebstemperatur -40 °C up to +130 °C | – | – | – | Länge11.3 mm | Breite10.95 mm | Höhe11.94 mm | – | – | Input Voltage 9 - 18 | Ausgangsspannung 115 V | Ausgangsspannung 2-4 V | Totale Ausgangsleistung6 W | Koppelkapazität7.5 pF | Induktivität7 µH | Sättigungsstrom5 A | Switching Frequency 350 | Übersetzungsverhältnis2.25:3.5:1 | VersionFlyback | IC-ReferenzLT8302 | ||||
| WE-AGDT Auxiliary Gate Drive Transformer, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-AGDT Auxiliary Gate Drive Transformer | – | – | – | BauformEP7 | Betriebstemperatur -40 °C up to +130 °C | – | – | – | Länge11.3 mm | Breite10.95 mm | Höhe11.94 mm | – | – | Input Voltage 9 - 18 | Ausgangsspannung 119 V | – | Totale Ausgangsleistung6 W | Koppelkapazität6.8 pF | Induktivität6 µH | Sättigungsstrom6.2 A | Switching Frequency 350 | Übersetzungsverhältnis1:2 | VersionFlyback | IC-ReferenzLT8302 | ||||
| WE-AGDT Auxiliary Gate Drive Transformer, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-AGDT Auxiliary Gate Drive Transformer | – | – | – | BauformEP7 | Betriebstemperatur -40 °C up to +130 °C | – | – | – | Länge11.3 mm | Breite10.95 mm | Höhe11.94 mm | – | – | Input Voltage 9 - 18 | Ausgangsspannung 119 V | Ausgangsspannung 24 V | Totale Ausgangsleistung6 W | Koppelkapazität7.5 pF | Induktivität7 µH | Sättigungsstrom4.5 A | Switching Frequency 350 | Übersetzungsverhältnis2.25:4.25:1 | VersionFlyback | IC-ReferenzLT8302 | ||||
| WE-AGDT Auxiliary Gate Drive Transformer, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-AGDT Auxiliary Gate Drive Transformer | – | – | – | BauformEP7 | Betriebstemperatur -40 °C up to +130 °C | – | – | – | Länge11.3 mm | Breite10.95 mm | Höhe11.94 mm | – | – | Input Voltage 9 - 18 | Ausgangsspannung 120 V | Ausgangsspannung 25 V | Totale Ausgangsleistung6 W | Koppelkapazität7.3 pF | Induktivität7 µH | Sättigungsstrom4.5 A | Switching Frequency 350 | Übersetzungsverhältnis1.8:3.6:1 | VersionFlyback | IC-ReferenzLT8302 |