IC manufacturers Analog Devices

IC manufacturers (103)

Analog Devices LT8302 | Demoboard RD001

6W LT8302 Wurth Ref. Design

Overview

TopologyFlyback Converter
Input voltage9-18 V
Switching frequency80-360 kHz
Output 1-4 V / 0.32 A
Output 215 V / 0.32 A
IC revisionG

Description

This reference design presents an extremely compact auxiliary power supply with a combined output power up to 6 W. Three different isolated bipolar output voltages are provided: +15 V / -4 V, +19 V / -4 V and +20 V / -5 V. The design is optimized for driving high-voltage SiC-MOSFET and IGBT discrete devices as well as power modules in high-power converters, and can be easily integrated in the gate driver system. The extremely low interwinding capacitance of the WE-AGDT transformers down to 7 pF helps to achieve high CMTI rating (Common-Mode Transient Immunity). This enables fast switching speeds which can yield efficiency and power density gains, as increasingly required in trending applications in e-mobility,renewable energy or industrial automation.

Features

  • Small size(Var.A: 27 mm x 14 mm x 14 mm) (Var.B: 40 mm x 14 mm x 13 mm)
  • 4 kV primary-secondary isolation
  • Only 7 pF typ. parasitic capacitance enabling high CMTI
  • PSR Flyback topology with LT8302 (ADI Power by Linear)
  • Load/line regulation less than 1 % typ.
  • Up to 88 % peak efficiency (86 % at 6 W)
  • Standard and AEC-Q qualified component assembly variants
  • Two PCB Layout Variants (2-layer and 4-layer)

Typical applications

  • Renewable energy: Solar inverters
  • Switch-mode power supplies with SiC MOSFETs
  • E-mobility: Electric Powertrain
  • Industrial drives: AC motor inverter
  • On-board and Off-board battery chargers

Products

Order Code
Data­sheet
Simu­lation
Downloads
Status
Product series
C
Tol. C
VR(V (DC))
Size
Operating Temperature
DF(%)
RISO
Ceramic Type
L(mm)
W(mm)
H(mm)
Fl(mm)
Packaging
VIN(V)
VOut1(V)
VOut2(V)
PO(W)
CWW 1(pF)
L(µH)
ISAT(A)
fswitch(kHz)
n
Version
IC Reference
Samples
WCAP-CSGP MLCCs 50 V(DC), 470 nF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance470 nF
Capacitance±10% 
Rated Voltage50 V (DC)
Size0805 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor3 %
Insulation Resistance1.1 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
WCAP-CSGP MLCCs 50 V(DC), 1 µF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance1 µF
Capacitance±10% 
Rated Voltage50 V (DC)
Size0805 
Operating Temperature -55 °C up to +125 °C
Dissipation Factor10 %
Insulation Resistance0.1 GΩ
Ceramic TypeX7R Class II 
Length2 mm
Width1.25 mm
Height1.25 mm
Pad Dimension0.5 mm
Packaging7" Tape & Reel 
WCAP-CSGP MLCCs 50 V(DC), 10 µF, ±10%
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
Capacitance10 µF
Capacitance±10% 
Rated Voltage50 V (DC)
Size1206 
Operating Temperature -55 °C up to +85 °C
Dissipation Factor10 %
Insulation Resistance0.005 GΩ
Ceramic TypeX5R Class II 
Length3.2 mm
Width1.6 mm
Height1.6 mm
Pad Dimension0.6 mm
Packaging7" Tape & Reel 
WE-AGDT Auxiliary Gate Drive Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
SizeEP7 
Operating Temperature -40 °C up to +130 °C
Length11.3 mm
Width10.95 mm
Height11.94 mm
Input Voltage 9 - 18
Output Voltage 115 V
Output Voltage 2-4 V
Total Output Power6 W
Interwinding Capacitance7.5 pF
Inductance7 µH
Saturation Current5 A
Switching Frequency 350
Turns Ratio2.25:3.5:1 
VersionFlyback 
IC ReferenceLT8302 
WE-AGDT Auxiliary Gate Drive Transformer, –, –
Simu­lation
Status Activei| Production is active. Expected lifetime: >10 years.
SizeEP7 
Operating Temperature -40 °C up to +130 °C
Length11.3 mm
Width10.95 mm
Height11.94 mm
Input Voltage 9 - 18
Output Voltage 115 V
Output Voltage 2-4 V
Total Output Power3 W
Interwinding Capacitance7 pF
Inductance18 µH
Saturation Current1.6 A
Switching Frequency 350
Turns Ratio2.25:3.5:1 
VersionFlyback 
IC ReferenceLM5180