| Topology | A-PHY |
| IC revision | B |
The AD-T1LUSB2.0-EBZ is a board ready for use out-of-the-box to quickly control any system with a 10BASE-T1L interface. The current hardware configuration provides a straightforward architecture with a USB Ethernet Controller and MAC (LAN9500A) connected through MII to the ADIN1100 PHY.The design also includes an EEPROM for saving and recalling MAC configurations and status LEDs to indicate link status (MAC) and user-programmable status flags from the PHY.The AD-T1LUSB2.0-EBZ board does not require any configuration to be functional and ready for use.
Easy-to-use USB2.0 to 10BASE-T1L interfaceEfficient data communication utilizing LAN9500A USB Ethernet Controller and MAC connected via MII to the ADIN1100 PHYOn-board EEPROM for saving and recalling MAC configurationsLEDs indicating MAC link status and user-programmable PHY status flagsOperates without an external power supply, powered directly from the USB bus
Order Code | Datasheet | Simulation | Downloads | Status | Product series | Data rate | L(µH) | VT(V (RMS)) | n | Operating Temperature | L(mm) | W(mm) | H(mm) | Z @ 100 MHz(Ω) | Zmax(Ω) | Test Condition Zmax | IR 2(mA) | RDC max.(Ω) | Type | Channels | Polarity | VCh max.(V) | ICh Leak max.(µA) | VBR min.(V) | CCh typ.(pF) | IPeak(A) | VCh Clamp ESD typ.(V) | VESD Contact(kV) | Samples | |
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![]() | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-STST Super Tiny Signal Transformer | Data rate10/100/1000 Base-T, 10/100 Base-T1 | Inductance350 µH | Insulation Test Voltage1500 V (RMS) | Turns Ratio1:1 | Operating Temperature -40 °C up to +105 °C | Length4.7 mm | Width3.22 mm | Height2.9 mm | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | ||||
![]() | WE-CBF SMT EMI Suppression Ferrite Bead, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-CBF SMT EMI Suppression Ferrite Bead | – | – | – | – | Operating Temperature -55 °C up to +125 °C | Length1.6 mm | Width0.8 mm | Height0.8 mm | Impedance @ 100 MHz300 Ω | Maximum Impedance450 Ω | Maximum Impedance250 MHz | Rated Current 22000 mA | DC Resistance0.15 Ω | TypeHigh Current | – | – | – | – | – | – | – | – | – | ||||
![]() | WE-TVS TVS Diode – High Speed Series, –, – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-TVS TVS Diode – High Speed Series | – | – | – | – | Operating Temperature -55 °C up to +125 °C | Length2.92 mm | Width2.4 mm | Height1.06 mm | – | – | – | – | – | – | Channels2+1 | PolarityUnidirectional | Channel Operating Voltage [max.]3.3 V | Channel (Reverse) Leakage Current [max.]1 µA | (Reverse) Breakdown Voltage [min.]4.5 V | (Channel) Input Capacitance [typ.]3 pF | (Reverse) Peak Pulse Current12 A | Channel ESD Clamping Voltage [typ.]9 V | ESD Contact Discharge Capability24 kV |