Wolfspeed UCC28C56/UCC25800/C3M0075120K | Demoboard CRD-20DA12N-K

Beschreibung

This reference design demonstrates how to use silicon carbide (SiC) MOSFETs to optimize the performance of a motor drive for auxiliary motors in electric vehicles, as well as Heating Ventilation and Air Conditioning (HVAC) and other similar applications. Utilizing SiC MOSFETs for these applications can increase system efficiency, reduce audible noise, and increase power density compared to silicon solutions. Although SiC MOSFETs are capable of achieving very high dv/dt switching transitions, the speed can also be easily controlled with the gate resistor to lower levels that are compatible with standard motor insulation while still achieving lower switching losses than silicon IGBTs.

Eigenschaften

• 3rd generation Silicon Carbide (SiC) MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant

Typische Anwendungen

• Motor Drive Inverters

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers