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reference designUCC28C56/UCC25800/C3M0075120K | Demoboard CRD-20DA12N-K

Wolfspeed UCC28C56/UCC25800/C3M0075120K | Demoboard CRD-20DA12N-K

11 and 20 kW High-Efficiency Motor Drive Inverters

Overview

TopologyMotor Drive
Input voltage550-850 V
Switching frequency16-32 kHz
Output 1420 V / 50 A
IC revision1

Description

This reference design demonstrates how to use silicon carbide (SiC) MOSFETs to optimize the performance of a motor drive for auxiliary motors in electric vehicles, as well as Heating Ventilation and Air Conditioning (HVAC) and other similar applications. Utilizing SiC MOSFETs for these applications can increase system efficiency, reduce audible noise, and increase power density compared to silicon solutions. Although SiC MOSFETs are capable of achieving very high dv/dt switching transitions, the speed can also be easily controlled with the gate resistor to lower levels that are compatible with standard motor insulation while still achieving lower switching losses than silicon IGBTs.

Features

  • 3rd generation Silicon Carbide (SiC) MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Typical applications

  • Motor Drive Inverters

More information

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L(µH)
∫Udt(µVs)
VT(V (DC))
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760301107
SPECWE-GDT Gate-Drive-Transformer, 1.5:1, 650 µH
Availability
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Downloads9 files

EDA models: Components ZIP

CAD files ZIP

Electric models ZIP

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Status Activei| Production is active. Expected lifetime: >10 years.
Product seriesWE-GDT Gate-Drive-Transformer
Turns Ratio1.5:1 
Inductance650 µH
Voltage-µSecond40.8 µVs
Insulation Test Voltage1500 V (DC)
Interwinding Capacitance9 pF
Leakage Inductance2.9 µH
SizeEP5 
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