IC-Hersteller Wolfspeed

IC-Hersteller (103)

Wolfspeed E3M0032120J2/UCC25800 | Demoboard CRD-22DD12N-J2

22 kW Bi-Directional CLLC Utilizing IMS Board

Details

TopologieGegentaktwandler (Vollbrücken)
Eingangsspannung380-900 V
Ausgang 1800 V / 36 A
IC-Revision1

Beschreibung

This reference design demonstrates the application of Wolfspeed’s automotive qualified E3M 1200V SiC MOSFETs in a TO-263-7 (J2) surface mount package to create a 22 kW Bi-Directional High Efficiency DC/DC Converter based on insulated metal substrate (IMS) board for electric vehicle (EV) on-board charger (OBC) and similar applications. The AEC-Q101 compliant E3M™ series MOSFETs are ideally suited for the most challenging on-board applications. This design is intended to work with an active-front-end (AFE) converter that adjusts the input voltage to the DC/DC converter to optimize the system efficiency based on the output (battery) voltage. The range of the DC input is designed to be compatible with both single and three-phase AFE systems while supporting a wide DC output voltage range of 480 V-800 V. A full bridge CLLC resonant converter with a flexible control scheme implements frequency modulation, phase shift control, adaptive synchronous rectification and a bridge reconfiguration technique. The use of 1200V 32mΩ automotive qualified SiC MOSFETs enhance thermal performance and facilitates assembly automation. The use of IMS PCB in this reference design exhibits superior thermal performance.

Eigenschaften

Peak efficiency of 98.6% in both charging and discharging modePower density of 9.4 kW/LBi-directional operation

Typische Anwendungen

  • Electric vehicle (EV) on-board charger (OBC) and similar

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Downloads Status ProduktseriePins
(pcs)
AnwendungPCB/Kabel/PanelModularityTypWire SectionH
(mm)
Ø OD
(mm)
IR 1
(A)
TiTl
(mm)
nL
(µH)
∫Udt
(µVs)
VT
(V (DC))
CWW 1
(pF)
LS
(µH)
Bauform Muster
691502710002SPEC
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760301107SPEC
8 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WE-GDT Gate-Drive-Übertrager 6 1.5:1 650 40.8 1500 9 2.9 EP5
7466204SPEC
5 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WP-SMBU REDCUBE SMT with internal blind-hole thread 7 7 50 M4 4
Muster
Artikel Nr. Daten­blatt Downloads Status ProduktseriePins
(pcs)
AnwendungPCB/Kabel/PanelModularityTypWire SectionH
(mm)
Ø OD
(mm)
IR 1
(A)
TiTl
(mm)
nL
(µH)
∫Udt
(µVs)
VT
(V (DC))
CWW 1
(pF)
LS
(µH)
Bauform Muster