Wolfspeed C3M0065100K | Demoboard CRD-20DD09P-2

Beschreibung

The purpose of this evaluation hardware is to demonstrate the system performance of Cree’s 3rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a full bridge LLC circuit that may be typically used for fast DC chargers for electrical vehicles. The new 1000V rated device in a 4L-TO247 package, specifically designed for SiC MOSFETs, has a Kelvin source connection to improve switching losses and reduce ringing in the gate circuit. It also features a notch between the drain and source pins to increase the creep distance to accommodate higher voltage SiC MOSFETs.

Eigenschaften

• Reference Designs by Application
• SpeedFit Design Simulator
• LTspice & PLECS Models
• SpeedVal Kit™ Modular Evaluation Platform

Typische Anwendungen

• fast DC chargers for electric vehicles (EV)

Weiterführende Informationen

• Datenblatt