| Topology | LLC Resonant Converter |
| Input voltage | 650-750 V |
| Output 1 | 550 V |
The purpose of this evaluation hardware is to demonstrate the system performance of Cree’s 3rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a full bridge LLC circuit that may be typically used for fast DC chargers for electrical vehicles. The new 1000V rated device in a 4L-TO247 package, specifically designed for SiC MOSFETs, has a Kelvin source connection to improve switching losses and reduce ringing in the gate circuit. It also features a notch between the drain and source pins to increase the creep distance to accommodate higher voltage SiC MOSFETs.
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Size | Version | SamplesAvailability & Sample | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | SPECWE-PD SMT Power Inductor, 3.5 µH, 14.5 A | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PD SMT Power Inductor | Inductance3.5 µH | Performance Rated Current14.5 A | Saturation Current9.5 A | DC Resistance8 mΩ | Self Resonant Frequency40 MHz | Size1260 | VersionStandard | –Check availability | |||
![]() | SPECWE-PD SMT Power Inductor, 680 µH, 1.2 A | Availability – | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-PD SMT Power Inductor | Inductance680 µH | Performance Rated Current1.2 A | – | DC Resistance825 mΩ | Self Resonant Frequency1.5 MHz | Size1210 | VersionStandard | –Check availability | |||
![]() | 750341672 | SPECFlyback Transformer, –, – | Simulation– | Availability – | Downloads– | Status Activei| Production is active. Expected lifetime: >10 years. | Product series Flyback Transformer | – | – | – | – | – | – | – | –Check availability |
| Expected Availability | Opening inventory | Quantity |
|---|---|---|
| Current Availability | – | – |