Topology | LLC Resonant Converter |
Input voltage | 650-750 V |
Output 1 | 550 V |
The purpose of this evaluation hardware is to demonstrate the system performance of Cree’s 3rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a full bridge LLC circuit that may be typically used for fast DC chargers for electrical vehicles. The new 1000V rated device in a 4L-TO247 package, specifically designed for SiC MOSFETs, has a Kelvin source connection to improve switching losses and reduce ringing in the gate circuit. It also features a notch between the drain and source pins to increase the creep distance to accommodate higher voltage SiC MOSFETs.
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (µH) | IRP,40K (A) | ISAT (A) | RDC max. (mΩ) | fres (MHz) | Size | Version | ISAT,10% (A) | ISAT,30% (A) | IR,40K (A) | Samples | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 744771003 | SPEC | 9 files | Active i| Production is active. Expected lifetime: >10 years. | WE-PD SMT Power Inductor | 3.5 | 14.5 | 9.5 | 8 | 40 | 1260 | Standard | 9.5 | 12.4 | 9.25 | ||
![]() | 7447709681 | SPEC | 9 files | Active i| Production is active. Expected lifetime: >10 years. | WE-PD SMT Power Inductor | 680 | 1.2 | – | 825 | 1.5 | 1210 | Standard | 1.3 | 1.6 | 1.1 | ||
![]() | 750341672 | SPEC | – | – | Active i| Production is active. Expected lifetime: >10 years. | Flyback Transformer | – | – | – | – | – | – | – | – | – | – |
Order Code | Datasheet | Simulation | |
---|---|---|---|
![]() | 744771003 | SPEC | |
![]() | 7447709681 | SPEC | |
![]() | 750341672 | SPEC | – |
Samples |
---|
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L (µH) | IRP,40K (A) | ISAT (A) | RDC max. (mΩ) | fres (MHz) | Size | Version | ISAT,10% (A) | ISAT,30% (A) | IR,40K (A) | Samples |
---|