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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 2 |
Typische Anwendungen
- On Board Charger
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | LR(µH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 0.18 µH, 0.157 µH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität0.18 µH | Nenninduktivität0.157 µH | Nennstrom65 A | Sättigungsstrom 163.9 A | Sättigungsstrom @ 30%72.7 A | Gleichstromwiderstand0.15 mΩ | Eigenresonanzfrequenz47 MHz | MaterialMnZn |