IC-Hersteller Valens Semiconductor

IC-Hersteller (103)

Valens Semiconductor VS2310TX | Demoboard BVS2 DSC1 TX 2310 NHDI POE

Details

TopologieHDBaseT
IC-RevisionC

Beschreibung

The Valens Colligo VS2310 is a high-end 5Playchipset that includes native USB 2.0 support andinter-device connectivity. The Valens Colligo VS2310chip’s proprietary HDI digital interfaces enable truemultistreaming and daisy-chaining. The ValensColligo VS2310 fully complies with the HDBaseT™2.0 Specification and supports the 5Play featureset for relaying audio, video, control, Ethernet, andpower over a single cable for up to 100m. The ValensColligo VS2310 is also backwards compatible with theHDBaseT 1.0 Specification and all legacy HDBaseTproducts.

Eigenschaften

Video Interfaces:Fully compliant with HDMI 1.4 and HDMI 2.0.EDID adjustment mechanism for HDMI 2.0 at pixel clock higher than 340MHzGlueless interface to TMDS, DDC, CEC, and HPD HDMI signalsHDMI interface:100m Cat6 uncompressed HD video:

  • 4K / 2K, 30Hz, 24bpp
  • 4K / 2K, 60Hz, 24bpp with 4:2:0 pixel format150m in long-reach mode:
  • 148.5Mhz HDMI pixel frequency
  • 1080p, 60Hz, 24bpp – uncompressedAudio Interfaces:All formats supported by HDMI 1.4 and HDMI 2.0All major digital audio formats, including: Dolby Digital, DTS, Dolby TrueHD,DTS HD-Master Audio, Dolby Pro Logic Iiz 7.1 & 9.1, and moreStandard SPDIF, I²SControl Interface:UART, IR, I²C (slave/master), MSIO-6 General Purpose fast serial channels,USB 2.0Ethernet Interface:100BaseT, SG/R/MIISystem Interfaces:RS232, I²C slave, SPI boot EEPROMPower:PoE (802.3af), PoE+ (802.3at), PoHData rate:Auxiliary channel data rate of 300Mbps Full DuplexDimensions:Valens Colligo VS2310TX – Heat Slug BGA 21mm x 21mmValens Colligo VS2310 RX – Heat Slug BGA 23mm x 23mmBall pitch – 1.0mmTX Pin count: 356, RX Pin count: 484

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
IR 1(mA)
IR 2(mA)
ISAT(mA)
RDC(mΩ)
fres(MHz)
Typ
H(mm)
B(mm)
Datenrate
Ports
PoE
Improved CMRR
Betriebstemperatur
VT(V (RMS))
Montageart
L(µH)
Muster
WE-PMI Power-Multilayer-Induktivität, 1300 mA, 1700 mA
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Nennstrom 11300 mA
Nennstrom 21700 mA
Sättigungsstrom1000 mA
Gleichstromwiderstand71.5 mΩ
Eigenresonanzfrequenz90 MHz
TypLow RDC 
Höhe1 mm
Breite2 mm
Betriebstemperatur -40 °C up to +125 °C
MontageartSMT 
Induktivität1 µH
WE-LAN 10G Übertrager 10Gbit Base-T, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
TypPoE 
Höhe6.6 mm
Breite13.5 mm
Datenrate10G Base-T 
Ports
PoEPoE (bis zu 350 mA) 
Verbesserte Common Mode EntstörungNein 
Betriebstemperatur 0 °C up to +70 °C
Prüfspannung1500 V (RMS)
MontageartSMT 
Induktivität200 µH