IC-Hersteller uPI Semiconductor
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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 12 V |
| Ausgang 1 | 1 V / 25 A |
Beschreibung
This article will demonstrate the performance improvements that can be obtained when using GaN FETs in combination with suitable GaN FET drivers in 12-V input to 1-V output point-of-load converters. The example design described here uses the uP1966D, a dual-channel, synchronous driver IC from uPI Semiconductor in combination with an EPC2100 GaN asymmetrical half-bridge FET from Efficient Power Conversion.
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 120 nH, 118 nH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität120 nH | Nenninduktivität118 nH | Nennstrom31 A | Sättigungsstrom 151.2 A | Sättigungsstrom @ 30%59.8 A | Gleichstromwiderstand0.325 mΩ | Eigenresonanzfrequenz150 MHz | MaterialMnZn | ||||
| WE-HCM SMT-Hochstrominduktivität, 155 nH, 150 nH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität155 nH | Nenninduktivität150 nH | Nennstrom31 A | Sättigungsstrom 144.5 A | Sättigungsstrom @ 30%51.5 A | Gleichstromwiderstand0.325 mΩ | Eigenresonanzfrequenz110 MHz | MaterialMnZn |