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Overview
| Topology | Buck Converter |
| Input voltage | 12 V |
| Output 1 | 1 V / 25 A |
Description
This article will demonstrate the performance improvements that can be obtained when using GaN FETs in combination with suitable GaN FET drivers in 12-V input to 1-V output point-of-load converters. The example design described here uses the uP1966D, a dual-channel, synchronous driver IC from uPI Semiconductor in combination with an EPC2100 GaN asymmetrical half-bridge FET from Efficient Power Conversion.
More information
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT High Current Flat Wire Inductor, 120 nH, 118 nH | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCM SMT High Current Flat Wire Inductor | Inductance120 nH | Rated Inductance118 nH | Rated Current31 A | Saturation Current @ 10%51.2 A | Saturation Current @ 30%59.8 A | DC Resistance0.325 mΩ | Self Resonant Frequency150 MHz | MaterialMnZn | ||||
| WE-HCM SMT High Current Flat Wire Inductor, 155 nH, 150 nH | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCM SMT High Current Flat Wire Inductor | Inductance155 nH | Rated Inductance150 nH | Rated Current31 A | Saturation Current @ 10%44.5 A | Saturation Current @ 30%51.5 A | DC Resistance0.325 mΩ | Self Resonant Frequency110 MHz | MaterialMnZn |