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Toshiba LTC7810ILXE | Demoboard RD231
48 V Bus Compatible 1.2 V/100 A Double Step-Down DC-DC Converter
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 40-59.5 V |
| Ausgang 1 | 1.2 V / 100 A |
| IC-Revision | 1 |
Beschreibung
The 48 V power supply for servers is getting popular in order to reduce power consumption of data centers. This DC-DC converter can convert the 48 V bus voltage to 1.2 V/100 A for several devices on a server efficiently. Design files and guides for circuit design and operation are available as reference design.
Eigenschaften
- Provides 1.2 V/100 A from the 48 V bus line very efficiently
- Total efficiency 83 % (Vin = 50 V at 100 % load condition)
- Outline size : 198 mm x 151 mm
- Provides the latest power MOSFET totally
Typische Anwendungen
- Server
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(Ω) | fres(MHz) | Drahttype | LR(nH) | IR(A) | RDC(mΩ) | Material | Montageart | ISAT(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 200 nH, 54.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität200 nH | Performance Nennstrom54.3 A | Sättigungsstrom 144 A | Sättigungsstrom @ 30%50.4 A | – | Eigenresonanzfrequenz45 MHz | – | Nenninduktivität198 nH | Nennstrom25 A | Gleichstromwiderstand0.37 mΩ | MaterialMnZn | MontageartSMT | – | ||||
 | WE-PD2 SMT-Speicherdrossel, 2200 nH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD2 SMT-Speicherdrossel | Induktivität2200 nH | – | – | – | Gleichstromwiderstand0.041 Ω | Eigenresonanzfrequenz54 MHz | – | – | Nennstrom4.6 A | – | MaterialNiZn | MontageartSMT | Sättigungsstrom8.2 A | ||||
 | WE-LHMI SMT Speicherdrossel, 10000 nH, 1.95 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität10000 nH | Performance Nennstrom1.95 A | Sättigungsstrom 11.5 A | Sättigungsstrom @ 30%3.15 A | Gleichstromwiderstand0.243 Ω | Eigenresonanzfrequenz23 MHz | – | – | – | – | – | MontageartSMT | – | ||||
 | WE-HCF SMT-Hochstrominduktivität, 22000 nH, 13.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität22000 nH | Performance Nennstrom13.8 A | Sättigungsstrom 113 A | Sättigungsstrom @ 30%15 A | Gleichstromwiderstand0.01172 Ω | Eigenresonanzfrequenz12.5 MHz | DrahttypeFlach | Nenninduktivität21100 nH | Nennstrom12.5 A | Gleichstromwiderstand10.65 mΩ | MaterialMnZn | MontageartSMT | Sättigungsstrom15 A |