| Topologie | Aufwärtswandler |
| Eingangsspannung | 1.8-5.5 V |
| Ausgang 1 | 28 V / 0.25 A |
| IC-Revision | A |
The TPS61096A is a high output voltage boostconverter with ultra-low quiescent current. It isdesigned for products that require high efficiency atlight load conditions powered by either two-cellalkaline, or one-cell Li-Ion or Li-polymer battery.The TPS61096A integrates a 30-V power switch anda power diode. It can output up to 28 Volts. TheTPS61096A uses a PFM peak current controlscheme to obtain the highest efficiency over a widerange of input and output load conditions. It onlyconsumes 1 μA quiescent current and can achieve upto 70% efficiency under 10-μA load condition.The TPS61096A can also support selective inductorpeak current. With 250-mA current limit, theTPS61096A can reduce inductor ripple so that itreduces external component size for light loadapplications. With 500 mA current limit, theTPS61096A can provide 30 mA output current for aconversion from 3.3 V to 18 V.The TPS61096A integrates two-channel low-powerlevel shifters to convert low level signals to outputvoltage level signals for specific applications. It onlyconsumes 1-μA static current per channel andensures very low static and dynamic powerconsumption across the entire output range.The TPS61096A is available in a 12-pin 3.0-mm x2.0-mm WSON Package.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR 1(mA) | IR 2(mA) | ISAT(mA) | RDC(mΩ) | fres(MHz) | Typ | H(mm) | B(mm) | IR(A) | ISAT1(A) | ISAT2(A) | RDC max.(mΩ) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PMI Power-Multilayer-Induktivität, 2.2 µH, 700 mA | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMI Power-Multilayer-Induktivität | Induktivität2.2 µH | Nennstrom 1700 mA | Nennstrom 21000 mA | Sättigungsstrom700 mA | Gleichstromwiderstand200 mΩ | Eigenresonanzfrequenz50 MHz | TypLow RDC | Höhe1 mm | Breite1.2 mm | – | – | – | Gleichstromwiderstand250 mΩ | ||||
![]() | WE-PMCI Power Molded Chip Induktivität, 2.2 µH, 1500 mA | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMCI Power Molded Chip Induktivität | Induktivität2.2 µH | Nennstrom 11500 mA | Nennstrom 22100 mA | Sättigungsstrom3500 mA | – | Eigenresonanzfrequenz35 MHz | – | Höhe1.2 mm | Breite2.5 mm | Nennstrom3.65 A | Sättigungsstrom 12.25 A | Sättigungsstrom 24.8 A | Gleichstromwiderstand75 mΩ |