| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-18 V |
| Schaltfrequenz | 580-600 kHz |
| Ausgang 1 | 2.5 V / 1 A |
The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor.The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | RDC max.(mΩ) | Material | fres(MHz) | Version | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-HCI SMT-Hochstrominduktivität, 0.68 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.68 µH | – | – | Gleichstromwiderstand3.41 mΩ | MaterialSuperflux | Eigenresonanzfrequenz105 MHz | VersionSMT | Performance Nennstrom20.9 A | Sättigungsstrom 19.5 A | Sättigungsstrom @ 30%20 A | Gleichstromwiderstand3.1 mΩ | ||||
![]() | WE-SPC SMT-Speicherdrossel, 4.7 µH, 2.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-SPC SMT-Speicherdrossel | Induktivität4.7 µH | Nennstrom2.2 A | Sättigungsstrom3.2 A | Gleichstromwiderstand52 mΩ | – | Eigenresonanzfrequenz44 MHz | VersionSMT | – | – | – | – |