IC-Hersteller Texas Instruments
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (97)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (257)
- Divimath (8)
- Elmos AG (1)
- EPC (136)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (30)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (24)
- MindCet (2)
- Monolithic Power Systems (979)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (266)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (328)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (114)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (54)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments TPS65214 | Demoboard TIDA-010973
100Mbps industrial ethernet communication module reference design for multiprotocol applications
Details
| Topologie | LAN / POE |
| IC-Revision | December 2025 |
Beschreibung
This reference design accelerates development of multiprotocol 100Mbps industrial Ethernet nodes. The design allows engineers to quickly prototype and deploy EtherCAT®, PROFINET®, EtherNet/IP, and Modbus® Transmission Control Protocol (TCP) on AM261x with Integrated Industrial Communication Subsystem (ICSS). The approach cuts hardware spins, simplifies clocking and power, and delivers deterministic, time-synchronized factory automation performance.
Eigenschaften
Supports multiple industrial Ethernet protocols: EtherCAT®, PROFINET® Real-Time (RT) and Isochronous Real-Time (IRT), EtherNet/IP®, and Modbus® TCPICSS enabling software-selectable multiprotocol operationSynchronize and latch real-time Ethernet signals for precise timing controlFlexible Host Port Interface (HPI) for connection to an external application processor or for use with a daughter cardEffective reference design for reduced bill of materials (BOM) and compact form factorElectromagnetic Compatibility (EMC) and Electromagnetic Interference (EMI) compatible PCB layout
Typische Anwendungen
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | IR(mA) | ISAT1(A) | ISAT2(A) | fres(MHz) | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 25 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 25 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung25 V (DC) | Bauform0201 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor10 % | Isolationswiderstand0.5 GΩ | KeramiktypX5R Klasse II | Länge0.6 mm | Breite0.3 mm | Höhe0.3 mm | Pad Dimension0.15 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 2.2 µF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität2.2 µF | Kapazität±20% | Nennspannung16 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor10 % | Isolationswiderstand0.05 GΩ | KeramiktypX5R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 10 V(DC), 22 µF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 10 V(DC) | Kapazität22 µF | Kapazität±20% | Nennspannung10 V (DC) | Bauform0805 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor10 % | Isolationswiderstand0.005 GΩ | KeramiktypX5R Klasse II | Länge2 mm | Breite1.25 mm | Höhe1.25 mm | Pad Dimension0.5 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | – | – | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | – | – | Nennstrom500 mA | – | – | – | Impedanz @ 100 MHz120 Ω | Maximale Impedanz200 Ω | Maximale Impedanz600 MHz | Nennstrom 21100 mA | Gleichstromwiderstand0.2 Ω | TypBreitband | ||||
 | WE-PMCI Power Molded Chip Induktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMCI Power Molded Chip Induktivität | – | – | – | Bauform160808 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.3 mm | – | Induktivität0.47 µH | Nennstrom3950 mA | Sättigungsstrom 11.5 A | Sättigungsstrom 23.35 A | Eigenresonanzfrequenz120 MHz | – | – | – | Nennstrom 21500 mA | Gleichstromwiderstand0.075 Ω | – |