| Topologie | Abwärtswandler |
| Eingangsspannung | 3-17 V |
| Ausgang 1 | 0.6 V / 8 A |
| IC-Revision | A |
The TPS6296x devices are a family of high-efficiency, low noise, and low ripple current mode synchronous buck converters. The devices are designed for noise sensitive applications that normally use an LDO for post regulation such as high-speed ADCs, clock and jitter cleaner, serializer, de-serializer, and radar applications.To reduce the output voltage ripple, the device loop compensation is designed to operate with an optional second-stage ferrite bead L-C filter. Low-frequency noise levels, similar to a low-noise LDO, are further achieved by filtering the internal voltage reference with a capacitor connected to the NR/SS pin. Combined, these features allow for an output voltage ripple below 10µVRMS.The device operates at a fixed switching frequency of 1.1MHz, 700kHz, or 500kHz, and can be synchronized to an external clock. An optional spread spectrum modulation scheme spreads the DC/DC switching frequency over a wider span, which lowers the mixing spurs.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(A) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-MAPI SMT-Speicherdrossel, 1 µH, 10.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom10.1 A | Sättigungsstrom @ 30%11.5 A | Gleichstromwiderstand12 mΩ | Eigenresonanzfrequenz55 MHz | Betriebsspannung80 V | MontageartSMT | – | – | – | Nennstrom7.2 A | – | Höhe2 mm | – | ||||
![]() | WE-MAPI SMT-Speicherdrossel, 1 µH, 10.25 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom10.25 A | Sättigungsstrom @ 30%12.5 A | Gleichstromwiderstand11.6 mΩ | Eigenresonanzfrequenz59 MHz | Betriebsspannung80 V | MontageartSMT | – | – | – | Nennstrom7.4 A | – | Höhe3.1 mm | – | ||||
![]() | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Gleichstromwiderstand2.5 mΩ | – | – | MontageartSMT | Impedanz @ 100 MHz8 Ω | Maximale Impedanz25 Ω | Maximale Impedanz1930 MHz | Nennstrom9.5 A | Impedanz @ 1 GHz24 Ω | Höhe0.8 mm | TypHochstrom | ||||
![]() | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Gleichstromwiderstand1 mΩ | – | – | MontageartSMT | Impedanz @ 100 MHz10 Ω | Maximale Impedanz41 Ω | Maximale Impedanz2178 MHz | Nennstrom10.5 A | Impedanz @ 1 GHz28 Ω | Höhe1.1 mm | TypHochstrom |