| Topologie | Abwärtswandler |
| Eingangsspannung | 3-17 V |
| Schaltfrequenz | 1000-2200 kHz |
| Ausgang 1 | 1.2 V / 6 A |
| IC-Revision | A |
The TPS62916E device is a highly efficient, low noise, and low ripple current mode synchronous buck converter. The device is designed for noise sensitive applications that normally use an LDO for post regulation such as high-speed ADCs, clock and jitter cleaner, serializer, de-serializer, and radar applications.To reduce the output voltage ripple, the device loop compensation is designed to operate with an optional second-stage ferrite bead L-C filter. Low frequency noise levels, similar to a low-noise LDO, are further achieved by filtering the internal voltage reference with a capacitor connected to the NR/SS pin. Combined, these features allow for an output voltage ripple below 10µVRMS.The device operates at a fixed switching frequency of 2.2MHz, 1.4MHz, or 1MHz, and can be synchronized to an external clock. An optional spread spectrum modulation scheme spreads the DC/DC switching frequency over a wider span, which lowers the mixing spurs.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR(A) | Z @ 1 GHz(Ω) | H(mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-MAPI SMT-Speicherdrossel, 1 µH, 10.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom10.1 A | Sättigungsstrom @ 30%11.5 A | Gleichstromwiderstand12 mΩ | Eigenresonanzfrequenz55 MHz | Betriebsspannung80 V | MontageartSMT | – | – | – | Nennstrom7.2 A | – | Höhe2 mm | – | ||||
![]() | WE-MAPI SMT-Speicherdrossel, 1 µH, 10.25 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom10.25 A | Sättigungsstrom @ 30%12.5 A | Gleichstromwiderstand11.6 mΩ | Eigenresonanzfrequenz59 MHz | Betriebsspannung80 V | MontageartSMT | – | – | – | Nennstrom7.4 A | – | Höhe3.1 mm | – | ||||
![]() | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Gleichstromwiderstand2.5 mΩ | – | – | MontageartSMT | Impedanz @ 100 MHz8 Ω | Maximale Impedanz25 Ω | Maximale Impedanz1930 MHz | Nennstrom9.5 A | Impedanz @ 1 GHz24 Ω | Höhe0.8 mm | TypHochstrom | ||||
![]() | WE-MPSB EMI Multilayer Power Suppression Bead, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | Gleichstromwiderstand1 mΩ | – | – | MontageartSMT | Impedanz @ 100 MHz10 Ω | Maximale Impedanz41 Ω | Maximale Impedanz2178 MHz | Nennstrom10.5 A | Impedanz @ 1 GHz28 Ω | Höhe1.1 mm | TypHochstrom |