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Texas Instruments TPS2379 | Demoboard PMP7499
Non-Standard (>25.5W) PoE - High Efficiency Forward Converter (12V@5A) Reference Design
Details
| Topologie | Sonstige Topologie |
| IC-Revision | B |
Beschreibung
This converter provides a high power PoE output of 12V/5A. The TPS2379 PD controller allows the use of an external hot swap FET for increased efficiency. The UCC2897A PWM controller is used to implement a high efficiency active clamp forward converter.Remark: BOM & Test-Result are added with schematic.
Eigenschaften
- High efficiency (90% with PoE supply, 93.6% with adapter supply)
- 12V at 5A output
- Isolated Forward with synchornous rectifier
- Uses TPS2379 combined with UCC2897A to implement a high efficiency active forward converter
- Allows an external hot swap FET for increased efficiency
- This circuit design is full-functional tested and recommended for new designs
Typische Anwendungen
- IP Camera
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | VT(V (AC)) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | IR(A) | ISAT(A) | RDC max.(mΩ) | LR(µH) | Version | Vin | VOut1(V) | IOut1(A) | Vaux(V) | n | Bauform | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 5.5 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität5.5 µH | – | Performance Nennstrom12 A | Sättigungsstrom 14.5 A | Sättigungsstrom @ 30%12 A | Gleichstromwiderstand10.3 mΩ | Eigenresonanzfrequenz30 MHz | MaterialSuperflux | – | – | Gleichstromwiderstand11.33 mΩ | Nenninduktivität4.3 µH | VersionSMT | – | – | – | – | – | Bauform1050 | MontageartSMT | ||||
| WE-HCI SMT-Hochstrominduktivität, 15 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität15 µH | – | Performance Nennstrom14.1 A | Sättigungsstrom 110.75 A | Sättigungsstrom @ 30%14 A | Gleichstromwiderstand9 mΩ | Eigenresonanzfrequenz14 MHz | MaterialMnZn | – | – | Gleichstromwiderstand9.72 mΩ | Nenninduktivität12 µH | VersionSMT | – | – | – | – | – | Bauform1890 | MontageartSMT | ||||
 | WE-PoE++ Power over Ethernet Plus Plus Transformer, 100 µH, 1500 V (AC) | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Induktivität100 µH | Prüfspannung1500 V (AC) | – | – | – | – | – | – | – | – | – | – | VersionForward | Input Voltage 36 - 72 V (DC) | Ausgangsspannung 112 V | Ausgangsstrom 15 A | Hilfsspannung12 V | Übersetzungsverhältnis2:1:1 | BauformEFD20 | MontageartSMT | ||||
 | WE-PD2 HV SMT-Speicherdrossel (High Voltage), 2200 µH, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD2 HV SMT-Speicherdrossel (High Voltage) | Induktivität2200 µH | – | – | – | – | – | Eigenresonanzfrequenz1.6 MHz | – | Nennstrom0.15 A | Sättigungsstrom0.2 A | Gleichstromwiderstand7200 mΩ | – | – | – | – | – | – | – | Bauform7850 | MontageartSMT |