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Texas Instruments TAS5828M | Demoboard TAS5828M Evaluation Module
50-W stereo, digital input, high-performance, closed-loop, Class-D, with integrated audio processor
Details
| Topologie | Class D Audio Amplifier |
Beschreibung
The TAS5828MEVM showcases the latest TI digital input Class-D closed loop amplifier. The TAS5828M is a digital input stereo high-efficiency Closed-Loop Class-D audio amplifier with an advanced Hybrid-Pro algorithm to improve system efficiency and reduce heat without clipping distortion. The TAS5828EVM is a stand-alone EVM, which has an optional battery power supply input with LM5155 boost or external power supply input bypassing the LM5155 boost, USB control via PurePath Control Console 3 (PPC3), and flexible audio input options. The TAS5828MEVM also can be configured using the Hardware control mode that supports setting switching frequency, analog gain, BTL/PBTL mode and Cycle by Cycle current limit threshold through pinconfiguration. This mode is especially designed to eliminate end system software driver integration efforts.
Eigenschaften
- TAS5828M Hybrid-Pro algorithm for audio envelope tracking
- Integrates LM5155 boost to provide customer system design reference
- Default system configuration: 5 V battery input, boost to max 16 V power rail based on audio envelope tracking
- Flexible TAS5828M Hybrid-Pro output (HPFB pin) to customer system board capability
- 96-kHz Input Sample Rate Support
- Operates in BTL or PBTL
- Provides flexible input signal routing (USB, Analog, Optical and external I2S)
- Demonstration, Evaluation and Development environment via the PurePath Console 3 software (GUI)
- Optional Hardware control mode to set switching frequency, analog gain, BTL/PBTL mode and Cycle by Cycle current limit through pin configuration
Typische Anwendungen
- Soundbars and subwoofers
- Battery-powered speaker, Wireless, bluetooth speakers, Heat or efficiency senstive audio system
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | Q(%) | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | ISAT,10%(A) | ISAT,30%(A) | IR,40K(A) | IRP,40K(A) | RDC max.(mΩ) | fres(MHz) | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 50 V(DC), 10 pF, ±5% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | Kapazität10 pF | Kapazität±5% | Nennspannung50 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | Güte600 % | – | Isolationswiderstand10 GΩ | KeramiktypNP0 Klasse I | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 10 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität10 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor3.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | |||||
| WCAP-CSGP MLCCs 16 V(DC), 100 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität100 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +125 °C | – | Verlustfaktor5 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | |||||
 | WE-PD Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | – | – | – | Bauform1210 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | – | Länge12 mm | Breite12 mm | Höhe10 mm | – | – | Induktivität10 µH | Sättigungsstrom 110.5 A | Sättigungsstrom @ 30%13 A | Nennstrom7.1 A | Performance Nennstrom9.5 A | Gleichstromwiderstand21 mΩ | Eigenresonanzfrequenz21 MHz | VersionGestanzt |