| Topologie | Sonstige Topologie |
| IC-Revision | B |
The TAS3251 Ultra-HD audio evaluation module demonstrates the TAS3251 integrated circuit from Texas Instruments. TAS3251 is a digital-input, high-performance Class-D audio amplifier that enables true premium sound quality with Class-D efficiency. The digital front-end features a high-performance Burr-Brown™ DAC with integrated DSP for advanced audio processing, including SmartAmp and SmartEQ. The integration of this single-chip solution reduces overall system solution size and cost. The DSP is supported by TI PurePath™ Console Graphical tuning software for quick and easy speaker tuning and control. The Class-D power stage features advanced integrated feedback and proprietary high-speed gate drive error correction for ultra-low distortion and noise across the audio band. The device operates in AD-mode and can drive up to 2 x 175 W into 4-Ω load and 2 x 220W into 3-Ω load.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 16 V(DC), 2.2 nF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 16 V(DC) | Kapazität2.2 nF | Kapazität±10% | Nennspannung16 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3.5 % | Isolationswiderstand10 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | |||||
![]() | WE-PD SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | – | – | – | Bauform1050 | Betriebstemperatur -40 °C up to +150 °C | – | – | – | Länge10 mm | Breite10 mm | Höhe5 mm | – | – | Induktivität100 µH | Sättigungsstrom1.8 A | Gleichstromwiderstand198 mΩ | Eigenresonanzfrequenz5.9 MHz | VersionPerformance |