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Texas Instruments LM5180-Q1 | Demoboard LM5180EVM-S05

LM5180-Q1 65-VIN no-opto flyback converter with 100-V, 1.5-A integrated MOSFET

Details

TopologieSperrwandler
Eingangsspannung10-65 V
Schaltfrequenz12-350 kHz
Ausgang 124 V / 0.5 A
IC-RevisionD

Beschreibung

The LM5180-Q1 is a primary-side regulated (PSR) flyback converter with high efficiency over a wide input voltage range of 4.5 V to 65 V. The isolated output voltage is sampled from the primary-side flyback voltage, eliminating the need for an optocoupler, voltage reference, or third winding from the transformer for output voltage regulation. The high level of integration results in a simple, reliable and high-density design with only one component crossing the isolation barrier. Boundary conduction mode (BCM) switching enables a compact magnetic solution and better than ±1.5% load and line regulation performance. An integrated 100-V power MOSFET provides output power up to 7 W with enhanced headroom for line transients.The LM5180-Q1 converter simplifies implementation of isolated DC/DC supplies with optional features to optimize performance for the target end equipment. The output voltage is set by one resistor, while an optional resistor improves output voltage accuracy by negating the thermal coefficient of the flyback diode voltage drop. Additional features include an internally-fixed or externally-programmable soft start, optional bias supply connection for higher efficiency, precision enable input with hysteresis for adjustable line UVLO, hiccup-mode overload protection, and thermal shutdown protection with automatic recovery.The LM5180-Q1 is qualified to automotive AEC-Q100 grade 1 and is available in 8-pin WSON package with 0.8-mm pin pitch and wettable flanks.

Eigenschaften

  • AEC-Q100-qualified for automotive applications
  • Device temperature grade 1: –40°C to 125°C ambient temperature range
  • Designed for reliable and rugged applications
  • Wide input voltage range of 4.5 V to 65 V
  • Robust solution with only one component crossing the isolation barrier
  • ±1.5% total output regulation accuracy
  • Optional VOUT temperature compensation
  • 6-ms internal or programmable soft start
  • Input UVLO and thermal shutdown protection
  • Hiccup-mode overcurrent fault protection
  • –40°C to +150°C junction temperature range
  • Integration reduces solution size and cost
  • Integrated 100-V, 0.4-Ω power MOSFET
  • No opto-coupler or transformer auxiliary winding required for VOUT regulation
  • Low EMI operation to meet CISPR 25
  • High efficiency PSR flyback operation
  • Quasi-resonant switching in boundary conduction mode (BCM) at heavy load
  • External bias option for improved efficiency
  • Single- and multi-output implementations

Typische Anwendungen

  • Automotive power train systems, Isolated bias power rails
  • Automotive body electronics

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
C
Tol. C
VR(V (DC))
Bauform
Betriebstemperatur
DF(%)
RISO
Keramiktyp
L(mm)
B(mm)
H(mm)
Fl(mm)
Verpackung
L(µH)
IR(mA)
ISAT(A)
fres(MHz)
Montageart
Vin
VOut1(V)
IOut1(A)
n
IR 1(mA)
RDC1 max.(Ω)
LS(nH)
VT(V (AC))
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(Ω)
Typ
Muster
WCAP-CSGP MLCCs 6.3 V(DC), 100 µF, ±20%
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Kapazität100 µF
Kapazität±20% 
Nennspannung6.3 V (DC)
Bauform1210 
Betriebstemperatur -55 °C up to +85 °C
Verlustfaktor10 %
Isolationswiderstand0.001 GΩ
KeramiktypX5R Klasse II 
Länge3.2 mm
Breite2.5 mm
Höhe2.5 mm
Pad Dimension0.6 mm
Verpackung7" Tape & Reel 
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Bauform0805 
Betriebstemperatur -55 °C up to +125 °C
Länge2 mm
Breite1.2 mm
Höhe0.9 mm
Pad Dimension0.5 mm
Nennstrom4500 mA
MontageartSMT 
Nennstrom [1]6000 mA
Gleichstromwiderstand [1]0.008 Ω
Impedanz @ 100 MHz22 Ω
Maximale Impedanz40 Ω
Maximale Impedanz1000 MHz 
Nennstrom 26000 mA
Gleichstromwiderstand0.008 Ω
TypHochstrom 
WE-TPC SMT-Speicherdrossel, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Bauform4818 
Betriebstemperatur -40 °C up to +125 °C
Länge4.8 mm
Breite4.8 mm
Höhe1.8 mm
Induktivität10 µH
Nennstrom1300 mA
Sättigungsstrom1 A
Eigenresonanzfrequenz45 MHz
MontageartSMT 
Gleichstromwiderstand0.15 Ω
WE-FLYTI MID-FLYTI Flyback Transformers for Texas Instruments, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
BauformEP7 
Betriebstemperatur -40 °C up to +125 °C
Länge9.78 mm
Breite9.5 mm
Höhe10.54 mm
VerpackungTape and Reel 
Induktivität30 µH
Sättigungsstrom2.6 A
MontageartSMT 
Input Voltage 12 - 70 V (DC)
Ausgangsspannung 15 V
Ausgangsstrom 11 A
Übersetzungsverhältnis3:1 
Streuinduktivität900 nH
Prüfspannung625 V (AC)