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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 3-65 V |
| Ausgang 1 | 5 V / 0.5 A |
Beschreibung
The LM5166EVM-C50A EVM is designed to use a regulated or non-regulated high-voltage input rail (3.0 Vto 65 V) to produce a tightly regulated output voltage of 5 V at continuous current levels up to 500 mA. Inparticular, the current limit is set to one of two pre-defined levels to optimize inductor size and maximizeefficiency. The EVM's maximum output current is configured by default to 500 mA but can be changed to300 mA by suitable component selection.
Eigenschaften
6V to 65V input voltage range5V target output voltageUltra-high power conversion efficiency: >90% at an output of 5 V and above 1 mA load (input voltage 12 V)COT or PFM control architectureNo-load supply current as low as 12µA
Typische Anwendungen
- Automotive and battery powered equipment
- Process control,Building automation and HVAC
- High voltage LDO replacement,General-purpose bias supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | RDC(mΩ) | fres(MHz) | RDC max.(mΩ) | Bauform | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LQS SMT-Speicherdrossel, 47 µH, 1.06 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität47 µH | Nennstrom1.06 A | Sättigungsstrom1.3 A | Gleichstromwiderstand315 mΩ | Eigenresonanzfrequenz14 MHz | – | Bauform6028 | – | ||||
 | WE-PD SMT-Speicherdrossel, 150 µH, 1.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität150 µH | Nennstrom1.2 A | Sättigungsstrom1.4 A | – | Eigenresonanzfrequenz4.9 MHz | Gleichstromwiderstand300 mΩ | Bauform1050 | VersionPerformance |