| Topologie | SEPIC Buck-Boost Topologie |
| Eingangsspannung | 9-12 V |
| Ausgang 1 | -60 V / -0.5 A |
| Ausgang 2 | 60 V / 0.5 A |
| IC-Revision | 001 |
The LM5155x ( LM5155 and LM51551 ) device is a wide input range, non-synchronous boost controller that uses peak current mode control. The device can be used in boost, SEPIC, and flyback topologies.The LM5155x device can start up from a 1-cell battery with a minimum of 2.97 V if the BIAS pin is connected to the VCC pin. It can operate with the input supply voltage as low as 1.5 V if the BIAS pin is greater than 3.5 V.The internal VCC regulator also supports BIAS pin operation up to 45 V (50-V absolute maximum). The switching frequency is dynamically programmable with an external resistor from 100 kHz to 2.2 MHz. Switching at 2.2 MHz minimizes AM band interference and allows for a small solution size and fast transient response.The device features a 1.5-A standard MOSFET driver and a low 100-mV current limit threshold. The device also supports the use of an external VCC supply to improve efficiency. Low operating current and pulse-skipping operation improve efficiency at light loads.The device has built-in protection features such as cycle-by-cycle current limit, overvoltage protection, line UVLO, and thermal shutdown. Hiccup mode overload protection is available in the LM51551 device option. Additional features include low shutdown IQ, programmable soft start, programmable slope compensation, precision reference, power-good indicator, and external clock synchronization.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR 1(mA) | IR 2(mA) | ISAT(mA) | RDC(mΩ) | fres(MHz) | Typ | H(mm) | B(mm) | IR(A) | Montageart | Muster | |
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![]() | WE-PMI Power-Multilayer-Induktivität, 2.2 µH, 550 mA | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMI Power-Multilayer-Induktivität | Induktivität2.2 µH | Nennstrom 1550 mA | Nennstrom 2800 mA | Sättigungsstrom280 mA | Gleichstromwiderstand300 mΩ | Eigenresonanzfrequenz80 MHz | TypLow RDC | Höhe0.9 mm | Breite0.8 mm | – | MontageartSMT | ||||
![]() | WE-LQS SMT-Speicherdrossel, 100 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität100 µH | – | – | Sättigungsstrom1200 mA | Gleichstromwiderstand433 mΩ | Eigenresonanzfrequenz6.3 MHz | – | Höhe4.5 mm | Breite6 mm | Nennstrom1 A | MontageartSMT | ||||
![]() | WE-TPC SMT-Speicherdrossel, 1000 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | Induktivität1000 µH | – | – | Sättigungsstrom80 mA | – | Eigenresonanzfrequenz2.3 MHz | – | Höhe2.8 mm | Breite4.8 mm | Nennstrom0.14 A | MontageartSMT |