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Texas Instruments LM5150-Q1 | Demoboard TIDA-01628
1.5-V to 42-V wide VIN, low IQ boost controller with 4 programmable output voltage options
Details
| Topologie | Sonstige Topologie |
| IC-Revision | B |
Beschreibung
This reference design implements power and driver notification functions typically found in an automotive instrument cluster. The design features reverse battery protection, a pre-boost stage to support cold-crank battery voltage conditions down to 3.5 volts, buck regulators for 3.3-V and 5-V supplies, an audio amplifier circuit to provide notifications, an LED backlight supply with automated brightness control and LED drivers with flexible diagnostic functions for tell-tale LEDs.
Eigenschaften
- Wide VIN range supports cold cranking to 3.5 V and load dump to 40 V
- Tell-tale LED drivers with configurable fault diagnostics
- 5-V, single-rail audio amplifier for chime and warning
- Adjustable ambient backlight brightness with light sensor
- Low-loss reverse battery protection for reduced power dissipation
Typische Anwendungen
- Hybrid Cluster with Active Graphics Support, Hybrid Cluster with Informational Graphics Support, Reconfigurable Digital Cluster
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | fres(MHz) | Montageart | IRP,40K(A) | RDC max.(Ω) | Bauform | Version | ISAT,10%(A) | ISAT,30%(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD2 SMT-Speicherdrossel, 1 µH, 4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD2 SMT-Speicherdrossel | Induktivität1 µH | Nennstrom4 A | Sättigungsstrom5.72 A | Eigenresonanzfrequenz110 MHz | MontageartSMT | Performance Nennstrom5.55 A | Gleichstromwiderstand0.049 Ω | Bauform4532 | – | Sättigungsstrom 15.72 A | Sättigungsstrom @ 30%6.6 A | ||||
 | WE-PD SMT-Speicherdrossel, 1.5 µH, 6.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität1.5 µH | Nennstrom6.2 A | Sättigungsstrom9.5 A | Eigenresonanzfrequenz75 MHz | MontageartSMT | – | Gleichstromwiderstand0.016 Ω | Bauform1030 | VersionPerformance | – | – | ||||
 | WE-TPC SMT-Speicherdrossel, 1.8 µH, 2.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | Induktivität1.8 µH | Nennstrom2.7 A | Sättigungsstrom2.45 A | Eigenresonanzfrequenz120 MHz | MontageartSMT | – | Gleichstromwiderstand0.025 Ω | Bauform4828 | – | – | – | ||||
| WE-PD SMT-Speicherdrossel, 4.7 µH, 4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität4.7 µH | Nennstrom4 A | Sättigungsstrom6 A | Eigenresonanzfrequenz42 MHz | MontageartSMT | – | Gleichstromwiderstand0.031 Ω | Bauform1030 | VersionPerformance | – | – |