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Texas Instruments LM5122-Q1 | Demoboard PMP11479
98% Efficient 30W Synchronous Automotive Pre-Boost Reference Design
Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | 6-16 V |
| Ausgang 1 | 12 V / 2.5 A |
| IC-Revision | A |
Beschreibung
98% Efficient 30W Synchronous Automotive Pre-Boost Reference Design. PMP11479 is a synchronous boost power supply using the LM5122-Q1 controllers. The design accepts an input voltage of 6Vin to 16Vin, and boosts a 12Vout rail capable of sourcing 2.5A continuous current. The LM5122-Q1 has an internal current source to keep the high side FET to run at 100% duty cycle which allows a bypass operation when the input voltage is greater than the configured output voltage.
Eigenschaften
- 6V to 16V in, output 12V@ 2.5A
- Achieving efficiency of 98% at 12Vin
- High density design
- Solution size: 36mm x 23mm
- Overvoltage and overcurrent protection
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | LR(nH) | IR(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 105 nH, 76.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität105 nH | Performance Nennstrom76.1 A | Sättigungsstrom 145 A | Sättigungsstrom @ 30%51 A | Gleichstromwiderstand0.235 mΩ | Eigenresonanzfrequenz70 MHz | MaterialMnZn | Nenninduktivität104 nH | Nennstrom30 A | ||||
 | WE-HCI SMT-Hochstrominduktivität, 6000 nH, 13.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität6000 nH | Performance Nennstrom13.6 A | Sättigungsstrom 16 A | Sättigungsstrom @ 30%14 A | Gleichstromwiderstand8.4 mΩ | Eigenresonanzfrequenz22 MHz | MaterialWE-PERM | Nenninduktivität4500 nH | – |