IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments AFE7920 | Demoboard AFE7920EVM

Four-transmit four-receive RF-sampling transceiver with dual-band DUC/DDC and two feedback paths

Details

TopologieRF signals / communications
IC-RevisionA

Beschreibung

The AFE7920 evaluation module (EVM) is an RF-sampling transceiver platform that can be configured to support up to four-transmit, four-receive plus two-feedback (4T4R + 2FB) channels simultaneously.The board evaluates the AFE7920 device, which is a quad-channel RF-sampling analog front end (AFE) with 14-bit 12-GSPS digital-to-analog converters (DACs), 14-bit 3-GSPS analog-to-digital converters (ADCs), and on-chip integrated PLL/VCO for high-frequency clock generation for DACs and ADCs.AFE7920EVM has options to use dual digital up converters and down converters in each channel to synthesize and digitize multiple wideband signals with high dynamic range simultaneously. On-chip integrated digital step attenuator (DSA) for the receiver channels and DSA functionality for the transmitter channels is supported. Eight JESD204B/C-compatible serializer/deserializer (SerDes) transceivers running up to 29.5 Gbps can be used for providing inputs and outputs to/from the AFE7920 device through the onboard FMC connector.AFE7920EVM includes the LMK04828 clock generator for providing a reference signal to the AFE on-chip PLL and for generating the required SYSREF signals for the JESD204B/C protocol. Also included is the option for providing an ultra-low-phase noise external clocking solution.AFE7920EVM implements an efficient low-dropout (LDO)-less power-management solution using only DC-DC converters for the required power rails. The design interfaces with the TI pattern/capture card solution (TSW14J57EVM) (sold separately), as well as many FPGA development kits.

Eigenschaften

  • Quad RF sampling 12-GSPS transmit DACs
  • Quad RF sampling 3-GSPS receive ADCs
  • Dual RF sampling 3-GSPS feedback ADCs (AFE792x only)
  • Maximum RF signal bandwidth:
  • TX/FB: 1200 MHz (AFE7920/88) or 400 MHz (AFE7989) or 800MHz (AFE7921)
  • RX: 600 MHz (AFE7920/88) or 400 MHz (AFE7921/AFE7989)
  • Digital Step Attenuators (DSA):
  • TX: 40 dB range, 1-dB analog and 0.125-dB digital steps
  • RX: 25 dB range, 0.5-dB steps
  • FB: 25 dB range, 0.5-dB steps
  • Single or dual-band DUC/DDCs (AFE7920/88 only) for TX and RX
  • Dual NCOs for fast frequency switching
  • Supports TDD operation with fast switching between TX and RX
  • Internal PLL/VCO to generate DAC/ADC clocks
  • Optional external CLK at DAC or ADC rate
  • SerDes data interface: – JESD204B and JESD204C compliant
  • 8 SerDes transceivers up to 29.5 Gbps
  • 8b/10b and 64b/66b encoding
  • 12-bit, 16-bit, 24-bit, and 32-bit resolution
  • Subclass 1 multi-device synchronization
  • Package: 17-mm × 17-mm FCBGA, 0.8-mm pitch

Typische Anwendungen

  • Macro remote radio unit (RRU), Active antenna system mMIMO (AAS), Small cell base station, Repeater, Distributed Antenna Systems (DAS)

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Montageart
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(mΩ)
Typ
Muster
WE-MAPI SMT-Speicherdrossel, 1 µH, 6.15 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1 µH
Performance Nennstrom6.15 A
Sättigungsstrom @ 30%6.5 A
Gleichstromwiderstand26 mΩ
Eigenresonanzfrequenz67 MHz
Betriebsspannung80 V
MontageartSMT 
Gleichstromwiderstand32 mΩ
WE-MAPI SMT-Speicherdrossel, 2.2 µH, 7.1 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2.2 µH
Performance Nennstrom7.1 A
Sättigungsstrom @ 30%9.2 A
Gleichstromwiderstand22 mΩ
Eigenresonanzfrequenz35 MHz
Betriebsspannung80 V
MontageartSMT 
Gleichstromwiderstand26 mΩ
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
MontageartSMT 
Impedanz @ 100 MHz60 Ω
Maximale Impedanz90 Ω
Maximale Impedanz500 MHz 
Nennstrom 23000 mA
Gleichstromwiderstand25 mΩ
TypHochstrom