| Topologie | Sonstige Topologie |
| IC-Revision | 1 |
The STEVAL-IDB005V1 is an evaluation platform based on BlueNRG-MS, a low power Bluetooth® Smart IC, compliant with the Bluetooth® 4.1 specifications and supporting both master and slave roles. The STEVAL-IDB005V1 is composed of an RF daughterboard and a microcontroller motherboard. The RF daughterboard features the BlueNRG-MS device, an SMA connector for an antenna or measuring instruments and an SPI connector for an external microcontroller.The motherboard is based on the STM32L, acting as external microcontroller driving the BlueNRG-MS device. A JTAG connector allows microcontroller firmware development.
◾Bluetooth® SMART board based on the BlueNRG-MS low energy network processor◾STM32L external microcontroller◾Associated BlueNRG-MS development kit, including documentation, firmware for STM32L and GUI◾Maximum transmission power +8 dBm◾Excellent receiver sensitivity (-88 dBm)◾Very low power consumption: 7.3 mA RX and 8.3 mA TX at +0 dBm◾Bluetooth® low energy 4.1 compliant, supports both master and slave roles◾iTunes app available (app name: BlueNRG)◾Google Play app available (app name: BlueNRG)◾JTAG debug connector◾USB Interface◾RoHS compliant
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | Q(%) | fres(MHz) | Montageart | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-GF SMT-Induktivität, 2.2 µH, 0.75 A | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-GF SMT-Induktivität | Induktivität2.2 µH | Performance Nennstrom0.75 A | Güte30 % | Eigenresonanzfrequenz100 MHz | MontageartSMT | – | – | – | – | Gleichstromwiderstand1000 mΩ | – | |||
![]() | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | MontageartSMT | Impedanz @ 100 MHz30 Ω | Maximale Impedanz55 Ω | Maximale Impedanz1000 MHz | Nennstrom 23000 mA | Gleichstromwiderstand25 mΩ | TypHochstrom |