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STMicroelectronics AST1S31
Up to 4 V, 3 A step-down 1.5 MHz switching regulator for automotive applications
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 2.8-4 V |
| Schaltfrequenz | 1200-1900 kHz |
| Ausgang 1 | 3.3 V / 3 A |
| IC-Revision | 5 |
Beschreibung
The AST1S31 device is an internally compensated 1.5 MHz fixed-frequency PWM synchronous step-down regulator. The AST1S31 device operates from 2.8 V to 4 V input, while it regulates an output voltage as low as 0.8 V and up to VIN.The AST1S31 integrates a 70 mΩ high-side switch and a 55 mΩ synchronous rectifier allowing very high efficiency with very low output voltages.The peak current mode control with an internal compensation deliver a very compact solution with a minimum component count.The AST1S31 device is available in a 3 x 3 mm, 8 leads VFDFPN package.
Eigenschaften
- AECQ100 qualification
- 3 A DC output current
- 2.8 V to 4 V input voltage
- Output voltage adjustable from 0.8 V
- 1.5 MHz switching frequency
- Internal soft-start and enable
- Integrated 70 mΩ and 55 mΩ power MOSFETs
- All ceramic capacitor
- Power Good (POR)
- Cycle-by-cycle current limiting
- Current foldback short-circuit protection
- VFDFPN 3 x 3 - 8L package
Typische Anwendungen
- Battery powered applications
- Designed for automotive systems / Car body applications
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | Material | IR,40K(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD SMT-Speicherdrossel, 1.5 µH, 19 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität1.5 µH | Performance Nennstrom19 A | Gleichstromwiderstand5 mΩ | Eigenresonanzfrequenz42 MHz | Bauform1280 | VersionGestanzt | Sättigungsstrom 119 A | Sättigungsstrom @ 30%24.5 A | – | – | Nennstrom16.5 A | ||||
 | WE-HCI SMT-Hochstrominduktivität, 1.5 µH, 9.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität1.5 µH | Performance Nennstrom9.6 A | Gleichstromwiderstand13.97 mΩ | Eigenresonanzfrequenz80 MHz | Bauform7030 | VersionSMT | Sättigungsstrom 14.75 A | Sättigungsstrom @ 30%12 A | Gleichstromwiderstand12.7 mΩ | MaterialSuperflux | – | ||||
| WE-HCI SMT-Hochstrominduktivität, 2 µH, 8.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2 µH | Performance Nennstrom8.7 A | Gleichstromwiderstand15.62 mΩ | Eigenresonanzfrequenz58 MHz | Bauform7030 | VersionSMT | Sättigungsstrom 13 A | Sättigungsstrom @ 30%9 A | Gleichstromwiderstand14.2 mΩ | MaterialSuperflux | – | ||||
| WE-PD Speicherdrossel, 2.4 µH, 13.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | Induktivität2.4 µH | Performance Nennstrom13.5 A | Gleichstromwiderstand9 mΩ | Eigenresonanzfrequenz41 MHz | Bauform1280 | VersionGestanzt | Sättigungsstrom 115 A | Sättigungsstrom @ 30%19.5 A | – | – | Nennstrom11.5 A | ||||
| WE-PD SMT-Speicherdrossel, 3.5 µH, 12 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität3.5 µH | Performance Nennstrom12 A | Gleichstromwiderstand11 mΩ | Eigenresonanzfrequenz37.5 MHz | Bauform1280 | VersionGestanzt | Sättigungsstrom 112.5 A | Sättigungsstrom @ 30%16.2 A | – | – | Nennstrom10.2 A |