IC-Hersteller STMicroelectronics

IC-Hersteller (96)

STMicroelectronics A2F12M12W2-F1 | Demoboard STDES-DABBIDIR

25 kW, dual active bridge bidirectional power converter for EV charging and battery energy storage systems

Details

TopologieLLC Resonanzwandler
Eingangsspannung800 V
Ausgang 1800 V
IC-Revision1.0

Beschreibung

The STDES-DABBIDIR provides a complete solution for a bidirectional DC-DC power converter.A dual active bridge topology based on an ACEPACK 2 SiC power module is proposed.The STM32G474RE MCU, enabling digital-intensive power control and optimized for mixed-signal applications, is used.Thanks to the latest generation SiC power module and high-frequency operation (100 kHz), high performance and design optimization are reached.Soft switching DAB behavior is managed by adaptive modulation techniques, according to the load/voltage variation.Bidirectional mode operation supports V2G and V2L implementations as well as UPS and battery energy storage applications.

Eigenschaften

  • Main power board
  • Driver board (1xHV side 2xLV side)
  • STM32G474RET3 control board
  • Dual active bridge DC-DC power converter:
  • Nominal DC input voltage: 800 V
  • Nominal DC output voltage: 400 V
  • Nominal power: 25 kW
  • Switching frequency: 100 kHz
  • Peak efficiency: 98.4%
  • ACEPACK 2 SiC power module to optimize power section integration and thermal dissipation
  • Bidirectional digital power control
  • Extended soft switching mode, enabled by sophisticated modulation techniques
  • Passive elements weight and size reduction thanks to high frequency SiC MOSFETs operation
  • STGAP2SICS galvanic isolated gate driver for SiC
  • STM32G474RET3 MCU for full digital solution
  • Inrush current control and soft startup

Typische Anwendungen

  • Dual Active Bridge Bidirectional power converter, UPS
  • Power converter for EV charging
  • battery energy storage

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CTol. CVR
(V (DC))
BauformBetriebstemperaturQ
(%)
DF
(%)
RISOKeramiktypL
(mm)
W
(mm)
Fl
(mm)
Z @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypPinsReihenH
(mm)
GenderIR
(mA)
Verpackung Muster
150080GS75000SPEC
7 Dateien WL-SMCW SMT Mono-color Chip LED Waterclear 525 Grün 515 450 3.2 InGaN 140 0805 -40 °C up to +85 °C 2 1.25 0.7 Tape and Reel
150080RS75000SPEC
7 Dateien WL-SMCW SMT Mono-color Chip LED Waterclear 625 Rot 630 150 2 AlInGaP 140 0805 -40 °C up to +85 °C 2 1.25 0.7 Tape and Reel
74279262SPEC
9 Dateien WE-CBF SMT-Ferrit 0603 -55 °C up to +125 °C 1.6 0.8 0.3 120 200 510 MHz 1350 0.3 Breitband 0.8 500
742792021SPEC
9 Dateien WE-CBF SMT-Ferrit 0805 -55 °C up to +125 °C 2 1.2 0.5 22 40 1000 MHz 6000 0.008 High Current 0.9 4500
885012006057SPEC
8 Dateien WCAP-CSGP MLCCs 50 V(DC)100 pF ±5% 50 0603 -55 °C up to +125 °C 100010 GΩ NP0 Klasse I 1.6 0.8 0.4 0.8 7" Tape & Reel
885012206046SPEC
8 Dateien WCAP-CSGP MLCCs 16 V(DC)100 nF ±10% 16 0603 -55 °C up to +125 °C 3.55 GΩ X7R Klasse II 1.6 0.8 0.4 0.8 7" Tape & Reel
885012207102SPEC
8 Dateien WCAP-CSGP MLCCs 50 V(DC)470 nF ±10% 50 0805 -55 °C up to +125 °C 31.1 GΩ X7R Klasse II 2 1.25 0.5 1.25 7" Tape & Reel
62201021121SPEC
6 Dateien WR-PHD 1.27 mm THT Dual Pin Header -40 °C up to +105 °C500 MΩ 6.35 Gerade 10 Dual Pin Header 1000 Karton
61300411121SPEC
6 Dateien WR-PHD 2.54 mm THT Pin Header -40 °C up to +105 °C1000 MΩ 10.16 Gerade 4 Single Pin Header 3000 Beutel
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieλDom typ.
(nm)
FarbeλPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie50% typ.
(°)
CTol. CVR
(V (DC))
BauformBetriebstemperaturQ
(%)
DF
(%)
RISOKeramiktypL
(mm)
W
(mm)
Fl
(mm)
Z @ 100 MHz
(Ω)
Zmax
(Ω)
Testbedingung ZmaxIR 2
(mA)
RDC max.
(Ω)
TypPinsReihenH
(mm)
GenderIR
(mA)
Verpackung Muster