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Details
| Topologie | Sonstige Topologie |
| Eingangsspannung | 9-24 V |
| IC-Revision | 0.1 |
Beschreibung
The Si8284V2-KIT’s evaluation board highlights the Si8284 part number from the Si828x family of isolated SiC FET and IGBT gate drivers. The Si8284 combines a high-quality, isolated gate driver with a high-efficiency dc-dc converter to simplify system power routing. The dc-dc converter in this configuration utilizes an external FET for power switching, which allows up to 24V input voltage.
Eigenschaften
- Si8284 low voltage side connections
- DC-DC Operation
- Si8284 isolated gate drive connections
- Gate Current Boost Option
- Alternative Configurations
Typische Anwendungen
- Variable-speed motor controllers, Isolated switch mode power supplies, AC, Brushless, and DC motor controls, SiC/IGBT/ MOSFET gate drives, Industrial and renewable energy inverters
- Inductive chargers, Traction inverters, Hybrid electric and electric vehicles, On-board chargers, DC-DC converters
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-CBF SMT-Ferrit, 600 Ω, 600 Ω | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | Impedanz @ 100 MHz600 Ω | Maximale Impedanz600 Ω | Maximale Impedanz100 MHz | Nennstrom 22500 mA | Gleichstromwiderstand0.3 Ω | TypBreitband |