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Silicontent Technology SCT61240Q | Demoboard SCT61240Q Evaluation Board
Quad Channel Power Management IC for Ultra Compact Camera Module
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4-19 V |
| Ausgang 1 | 1.2 A |
| Ausgang 2 | 1.5 V / 1.2 A |
| Ausgang 3 | 1.8 V / 0.6 A |
| IC-Revision | 1.0 |
Beschreibung
The SCT61240Q is a highly integrated power management IC (PMIC) optimized for automotive camera system. It integrates three high efficiency synchronous BUCK converters (HVBUCK1, LVBUCK2, LVBUCK3), and a high-PSRR low noise LDO with OV/UV monitoring on all outputs.
Eigenschaften
- Qualified for Automotive Applications
- AEC-Q100 Qualified with the Following Results:
- Device Temperature Grade 1: -40°C to 125°C Ambient Operating Temperature Range
- Wide Input Voltage Range: 4V-19V
- Synchronous MV Pre-Buck1:
- Up to 1.2A Continuous Output Current
- Auto-adaptive Output Voltage Depends on LDO Output Voltage
- Synchronous LV Post-Buck2:
- Powered by Pre-Buck1
- Up to 0.6A Continuous Output Current
- Fixed Output Voltage of 1.8V
- Synchronous LV Post-Buck3:
- Powered by Pre-Buck1
- Up to 1.2A Continuous Output Current
- Adjustable Output Voltage: 1.1V/1.2V/1.3V/1.5V
- LV Post-LDO:
- Powered by Pre-Buck1
- Up to 0.3A Continuous Output Current
- Adjustable Output Voltage: 2.7V/2.8V/2.9V/3.3V
- Low Noise and High PSRR
- Low Shutdown Current: 1uA
- Fixed 2.2MHz Switching Frequency
- Integrated Frequency Dither for EMI Mitigation
- FCCM Operation
- 60ns Minimum On-time
- 6 Flexible Sequence via External Resistor
- 9 Flexible Output Voltage via External Resistor
- Push-pull Power Good Indicator
- Integrated Hiccup Mode Protection Features:
- Input Over-voltage Protection
- Output Over-voltage Protection
- Output Under-voltage Protection
- Over-current Protection
- Adjustable Under-voltage Lockout
- Thermal Shutdown Protection
- Available in QFN-18L(2.5mm*3.5mm)
Typische Anwendungen
- Compact Camera Module, ADAS, Cabin Monitor
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Pins | Typ | L(mm) | H(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MAPI SMT-Speicherdrossel, 1 µH, 4.05 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom4.05 A | Sättigungsstrom @ 30%6.3 A | Gleichstromwiderstand49 mΩ | Eigenresonanzfrequenz85 MHz | Betriebsspannung80 V | MontageartSMT | Pins2 | – | Länge2.5 mm | Höhe1.2 mm | Nennstrom2.8 A | – | Betriebstemperatur -40 °C up to +125 °C | ||||
| WE-MAPI SMT-Speicherdrossel, 2.2 µH, 2.45 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität2.2 µH | Performance Nennstrom2.45 A | Sättigungsstrom @ 30%3.65 A | Gleichstromwiderstand123 mΩ | Eigenresonanzfrequenz57 MHz | Betriebsspannung80 V | MontageartSMT | Pins2 | – | Länge2.5 mm | Höhe1.2 mm | Nennstrom1.6 A | – | Betriebstemperatur -40 °C up to +125 °C | ||||
| WE-MAPI SMT-Speicherdrossel, 4.7 µH, 4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität4.7 µH | Performance Nennstrom4 A | Sättigungsstrom @ 30%5.75 A | Gleichstromwiderstand63 mΩ | Eigenresonanzfrequenz22 MHz | Betriebsspannung80 V | MontageartSMT | Pins2 | – | Länge4 mm | Höhe2 mm | Nennstrom2.9 A | – | Betriebstemperatur -40 °C up to +125 °C | ||||
 | WR-PHD Stiftleisten - Einreihig, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | – | – | – | – | – | – | MontageartTHT | Pins3 | TypGerade | Länge7.62 mm | – | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C |