IC-Hersteller Silicon Laboratory Inc.

IC-Hersteller (104)

Silicon Laboratory Inc. EFR32MG24B310F1536IM48 | Demoboard xG24-DK2601B

EFR32xG24 Dev Kit

Details

TopologieUSB
Eingangsspannung5 V
IC-RevisionA01

Beschreibung

The EFR32xG24 Dev Kit is a compact, feature-packed development platform. It provides the fastest path to develop and prototype wireless IoT products. The development platform supports up to +10 dBm output power and includes support for the 20-bit ADC as well as other key features. With the xG24’s AI/ML hardware accelerator, this is the ideal development board for AI/ML development including platforms from TinyML, Edge Impulse, SensiML and MicroAI.

Eigenschaften

  • 2.4 GHz ceramic chip antenna
  • Power control of on-board peripherals forultra-low power operation
  • Relative humidity and temperature sensor
  • Ambient light sensor
  • Hall effect sensor
  • 6-axis inertial sensor
  • MEMS stereo microphones
  • Pressure sensor
  • 32 Mbit flash for OTA programming anddata logging
  • RGB LED and two push buttons
  • Precise voltage reference and dedicatedU.FL connector for ADC measurements
  • 20-pin 2.54 mm breakout pads
  • Qwiic® connector
  • SEGGER J-Link on-board debugger
  • Virtual COM port
  • Packet Trace Interface (PTI)
  • Mini Simplicity connector for AEM andpacket trace using external Silicon Labsdebugger
  • USB or coin cell battery powered
  • External battery connector

Typische Anwendungen

  • Tire Monitoring Sensor (TMS)
  • Garage Door Openers
  • Remote Controls
  • Rearview Mirrors
  • Building Automation - Gateways, sensors, switches, location services
  • Smart Home - Gateways and hubs, sensors, switches, door locks, smart plugs
  • Passive Keyless Entry (PKE)
  • Lighting - LED bulbs, luminaires
  • AI/ML - Predictive maintenance, glass break detection, wake-word detection
  • Tire Pressure Monitoring System (TPMS)
  • Passive Entry Passive Start (PEPS)

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
IR(mA)
RDC(Ω)
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
Testbedingung IR 2
Z @ 1 GHz(Ω)
Typ
MusterVerfügbarkeit & Muster
SPECWE-TMSB SMT-Ferrit, 200 mA, –
Simu­lation
Verfügbarkeit
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-TMSB SMT-Ferrit
Nennstrom200 mA
Impedanz @ 100 MHz240 Ω
Maximale Impedanz460 Ω
Maximale Impedanz536 MHz 
Nennstrom 2300 mA
Nennstrom 2ΔT = 40 K 
Impedanz @ 1 GHz342 Ω
TypBreitband 
Verfügbarkeit prüfen
SPECWE-CBA SMT EMI Suppression Ferrite Bead, 400 mA, 0.3 Ω
Simu­lation
Verfügbarkeit
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Nennstrom400 mA
Gleichstromwiderstand0.3 Ω
Impedanz @ 100 MHz220 Ω
Maximale Impedanz330 Ω
Maximale Impedanz400 MHz 
Impedanz @ 1 GHz262.58 Ω
TypBreitband 
Verfügbarkeit prüfen