IC-Hersteller Silicon Laboratory Inc.

IC-Hersteller (103)

Silicon Laboratory Inc. EFR32BG27 | Demoboard xG27-DK2602A

EFR32xG27 Development Kit

Details

TopologieUSB
Eingangsspannung5 V
IC-RevisionA02

Beschreibung

The EFR32xG27 Dev Kit (xG27-DK2602A) is a compact, feature-packed development platform. It provides the fastest path to develop and prototype wireless IoT products. The development platform supports up to +8 dBm output power and includes support for the 16-bit ADC as well as other key features.

Eigenschaften

Based on EFR32BG27C140F768IM40 2.4 GHz Wireless SoC,+8 dBm, 768 kB Flash, 64 kB RAM, 5x5 QFN40Integrated on-chip antennaSecure Vault™ MidOn-board sensors: temperature sensor, humidity sensor, 6-axis inertial sensor, 2 x digital microphones, ambient light sensor, hall effect sensorUser LED / pushbuttonsQwiic Connector: For compatibility with Sparkfun's expansion hardware (sensors, camera, LCD, etc.)USB Port: Board Power, Serial CommunicationOn-board Debugger: SWD, VCOM, and Packet Trace Interface (PTI)Probe points for power measurementsCR2032 coin cell battery support

Typische Anwendungen

  • Portable Medical
  • Home End Devices
  • Fleet/Asset Monitoring
  • Sports, Fitness, and Wellness devices
  • Power Tools
  • Bluetooth Mesh
  • Access Control
  • Industrial Automation

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
IR(mA)
RDC(Ω)
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
Testbedingung IR 2
Z @ 1 GHz(Ω)
Typ
Muster
WE-TMSB SMT-Ferrit, 200 mA, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-TMSB SMT-Ferrit
Nennstrom200 mA
Impedanz @ 100 MHz240 Ω
Maximale Impedanz460 Ω
Maximale Impedanz536 MHz 
Nennstrom 2300 mA
Nennstrom 2ΔT = 40 K 
Impedanz @ 1 GHz342 Ω
TypBreitband 
WE-CBA SMT EMI Suppression Ferrite Bead, 3000 mA, 0.05 Ω
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Nennstrom3000 mA
Gleichstromwiderstand0.05 Ω
Impedanz @ 100 MHz220 Ω
Maximale Impedanz330 Ω
Maximale Impedanz300 MHz 
TypHochstrom