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Renesas ZSPM8015

ZSPM8015-KIT Open-Loop Evaluation Board

Details

TopologieAbwärtswandler
Eingangsspannung4.5-25 V
Schaltfrequenz1000 kHz
Ausgang 11 V
IC-Revision1.00

Beschreibung

The ZSPM8015-KIT Open-Loop Evaluation Board is designed to demonstrate the optimized small-size, highefficiency performance of the ZSPM9015 DrMOS multi-chip module. The board is a high density, high-efficiencydesign, with a 1 MHz operating frequency and peak efficiency of over 93% with a 1.0V VOUT condition. This board also demonstrates the ease of layout for printed circuit board artwork.

The board was designed as an open-loop control to have only common passive components in a synchronous buck converter without a PWM controller. The open-loop control method is more reliable and flexible, allowing performance testing with identical conditions. Since the ZSPM9015 pin map is industry standard, it is easy to compare its performance to other DrMOS devices without changing other components.

See Appendix B for the schematic for the Evaluation Board. See Appendix A for the Evaluation Board's physical specifications and layouts for the individual layers of the circuit board.

Eigenschaften

  • Ultra-compact 6x6 mm QFN, 72% space saving compared to conventional full discrete solutions
  • Fully optimized system efficiency: > 93% peak
  • Clean switching waveforms with minimal ringing
  • High current handling: up to 35A
  • VIN: 4.5V to 25V (typical 12V)
  • Tri-state PWM input capable of 3.3V and 5V
  • Zero-current detection and under-voltage lockout (UVLO)
  • Thermal shutdown and warning flag for over temperature conditions
  • Driver output disable function (DISB# pin)
  • Integrated Schottky diode technology in low side MOSFET
  • Integrated bootstrap Schottky diode
  • Adaptive gate drive timing for shoot-through protection
  • Optimized for switching frequencies up to 1 MHz
  • Based on the Intel® 4.0 DrMOS standard

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieL
(nH)
LR
(nH)
IR
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
Material Muster
744302010SPEC
8 Dateien WE-HCM SMT-Hochstrominduktivität 105 104 30 45 51 0.235 MnZn
Artikel Nr. Daten­blatt Simu­lation
744302010SPEC
Muster
Artikel Nr. Daten­blatt Simu­lation Downloads ProduktserieL
(nH)
LR
(nH)
IR
(A)
ISAT1
(A)
ISAT,30%
(A)
RDC
(mΩ)
Material Muster