Renesas RRP68150/RTP100E2P6G1FL | Demoboard EVB-RTP100E2P6G1FL

Beschreibung

The EVB-RTP100E2P6G1FL evaluation board showcases the performance of the RTP100E2P6G1FL 100V 2.6mΩ enhancement-mode (e-mode) gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas' low-voltage GaN technology and the RRP68150 GaN gate driver, the board provides a practical platform for evaluating switching behavior, efficiency, and overall system performance.The evaluation board helps simplify the transition from traditional silicon MOSFETs to GaN technology by demonstrating the benefits of ultra-fast switching and low-loss operation. With convenient measurement points and a proven power-stage design, it enables performance comparison, layout optimization, and a deeper understanding of how GaN technology can improve efficiency and power density in next-generation power systems.

Eigenschaften

Performance testing of low-voltage GaN across a wide range of Vin, Vout, Fsw, and PoutFlexible and user-friendly buck converter evaluation boardSupports 48V input and 12V output with up to 330W output powerOperates across switching frequencies from 250kHz to 500kHzHigh-frequency power conversion optimizationConvenient test points for waveform measurementSupports high-efficiency, high-power-density designsFootprint-compatible GaN FET package simplifies migration from silicon MOSFET solutions

Typische Anwendungen

• Power supply

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers