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reference designRRP68150/RTP100E2P6G1FL | Demoboard EVB-RTP100E2P6G1FL

Renesas RRP68150/RTP100E2P6G1FL | Demoboard EVB-RTP100E2P6G1FL

RTP100E2P6G1FL Low Voltage GaN Evaluation Board

Overview

TopologyBuck Converter
Input voltage48-80 V
Output 116 V / 28 A
IC revision1

Description

The EVB-RTP100E2P6G1FL evaluation board showcases the performance of the RTP100E2P6G1FL 100V 2.6mΩ enhancement-mode (e-mode) gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas' low-voltage GaN technology and the RRP68150 GaN gate driver, the board provides a practical platform for evaluating switching behavior, efficiency, and overall system performance.The evaluation board helps simplify the transition from traditional silicon MOSFETs to GaN technology by demonstrating the benefits of ultra-fast switching and low-loss operation. With convenient measurement points and a proven power-stage design, it enables performance comparison, layout optimization, and a deeper understanding of how GaN technology can improve efficiency and power density in next-generation power systems.

Features

Performance testing of low-voltage GaN across a wide range of Vin, Vout, Fsw, and PoutFlexible and user-friendly buck converter evaluation boardSupports 48V input and 12V output with up to 330W output powerOperates across switching frequencies from 250kHz to 500kHzHigh-frequency power conversion optimizationConvenient test points for waveform measurementSupports high-efficiency, high-power-density designsFootprint-compatible GaN FET package simplifies migration from silicon MOSFET solutions

Typical applications

  • Power supply

More information

Parts approved by Renesas

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Product series
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
fres(MHz)
Wire Type
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74436410220
SPECWE-HCF SMT High Current Inductor, 2.2 µH, 44 A
Simu­lation
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Downloads8 files

Status
ActiveProduction is active. Expected lifetime: >10 years.
iProduction is active. Expected lifetime: >10 years.
Product seriesWE-HCF SMT High Current Inductor
Inductance2.2 µH
Performance Rated Current44 A
Saturation Current @ 10%85 A
Saturation Current @ 30%88.5 A
DC Resistance1.44 mΩ
Self Resonant Frequency32.8 MHz
Wire TypeFlat 
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