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Onsemi NCP1060 | Demoboard NCP1060BUCKGEVB
High-Voltage Switcher for low Power offline SMPS Evaluation Board
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 90-265 V |
| Ausgang 1 | 12 V / 0.15 A |
Beschreibung
The NCP1060BUCKGEVB Evaluation Board is designed to quickly and efficiently test the NCP1060, which integrates a fixed frequency current mode controller with a 700 V MOSFET
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | RDC max.(Ω) | Material | fres(MHz) | Montageart | VRMS(V) | VDC(V) | VBR(V) | IPeak(A) | Wmax(J) | PDiss(W) | VDE-Zulassung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-TI HV Tonneninduktivität (High Voltage), 1000 µH, 0.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TI HV Tonneninduktivität (High Voltage) | Induktivität1000 µH | Nennstrom0.5 A | Sättigungsstrom0.55 A | Gleichstromwiderstand2.08 Ω | MaterialNiZn | Eigenresonanzfrequenz1.8 MHz | MontageartTHT | – | – | – | – | – | – | – | ||||
 | WE-PD2 HV SMT-Speicherdrossel (High Voltage), 1200 µH, 0.28 A | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD2 HV SMT-Speicherdrossel (High Voltage) | Induktivität1200 µH | Nennstrom0.28 A | Sättigungsstrom0.28 A | Gleichstromwiderstand4.5 Ω | – | Eigenresonanzfrequenz2.1 MHz | MontageartSMT | – | – | – | – | – | – | – | |||
 | WE-VD Disk Varistor, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-VD Disk Varistor | – | – | – | – | – | – | MontageartTHT | Wechselstrom Betriebsspannung275 V | DC Betriebsspannung350 V | (Rückwärts-) Durchbruchspannung430 V | (Reverse) Peak Pulse Current1200 A | Energieabsorption33 J | Verlustleistung0.25 W | VDE-ZulassungJa |