IC-Hersteller Nisshinbo Micro Device Inc.
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- Alle Hersteller
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Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | -0.3-6.5 V |
| Schaltfrequenz | 1000-1400 kHz |
| Ausgang 1 | 12 V / 0.02 A |
| IC-Revision | 210322 |
Beschreibung
The R1202 Series are CMOS-based PWM step-up DC/DC converters, which are optimized to drive white LEDs and PMOLED with constant current. There are two types. The A/B versions are optimized for the general use or the drive of PMOLED, and the D version is optimized for the serial drive of white LED with constant current. The R1202 includes an under-voltage lockout circuit (UVLO), a soft-start circuit, and an over-voltage protection circuit (OVP), a thermal shutdown circuit. By simply using an inductor, divider resistors, and capacitors as external components, PMOLED and white LEDs can be driven with high efficiency. At the standby mode, the internal NPN transistor can separate the output from the input. (Shutdown function) The A/B version with auto-discharge function is selectable. D Version can set the LED current with feedback resistor (R1). The brightness of the LEDs and the soft-start time can be adjusted by applying a PWM signal (200Hz to 300kHz) to the CE pin. In addition to DFN1616-6B, 0.95mm thickness TSOT-23-6 is available.
Eigenschaften
- Input Voltage Range: 2.3V to 5.5V (R1202xxxxA/B), 1.8V to 5.5V (R1202xxxxD)
- Supply Current: Typ. 800µA
- Standby Current: Max. 5µA
- Feedback Voltage: 1.0V±15mV (R1202xxxxA/B), 0.2V±10mV (R1202xxxxD)
- Oscillator Frequency: Typ. 1.2MHz
- Maximum Duty Cycle: Typ. 91%
- UVLO Function: Typ.2.0V (Hys.Typ.0.2V) (R1202xxxxA/B) Typ.1.6V (Hys.Typ.0.1V) (R1202xxxxD)
- Lx Current Limit Function: Select from 350mA, 700mA
- Over Voltage Protection: Select from 14V-23V (Refer the Selection Guide)
- LED dimming control for R1202xxxxD: by external PWM signal (Frequency 200Hz to 300kHz)
- Thermal Protection Function: Typ.150ºC(Hys.Typ.50ºC)
- Built-in Auto Discharge Function: R1202xxxxA
- NMOS ON Resistance: 1.35Ω
- Packages: DFN1616-6B, TSOT-23-6
Typische Anwendungen
- White LED Backlight for portable equipment
- • Constant Voltage Power Source for portable equipment, OLED power supply for portable equipment
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(Ω) | fres(MHz) | IRP,40K(A) | Montageart | IR(A) | ISAT(A) | RDC(mΩ) | RDC typ.(mΩ) | VOP(V) | Q(%) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LQ SMT-Induktivität, 10 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQ SMT-Induktivität | Induktivität10 µH | – | – | Gleichstromwiderstand0.65 Ω | Eigenresonanzfrequenz20 MHz | – | MontageartSMT | Nennstrom0.32 A | Sättigungsstrom0.85 A | – | – | Betriebsspannung120 V | Güte35 % | ||||
 | WE-LQS SMT-Speicherdrossel, 10 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | Induktivität10 µH | – | – | – | Eigenresonanzfrequenz37 MHz | – | MontageartSMT | Nennstrom0.84 A | Sättigungsstrom0.87 A | Gleichstromwiderstand230 mΩ | – | Betriebsspannung120 V | – | ||||
 | WE-MAPI SMT-Speicherdrossel, 10 µH, 1.35 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität10 µH | Sättigungsstrom 11.35 A | Sättigungsstrom @ 30%2.75 A | Gleichstromwiderstand0.513 Ω | Eigenresonanzfrequenz21 MHz | Performance Nennstrom1.25 A | MontageartSMT | Nennstrom0.85 A | Sättigungsstrom2 A | – | Gleichstromwiderstand446 mΩ | Betriebsspannung80 V | – | ||||
 | WE-MAPI SMT-Speicherdrossel, 10 µH, 1.55 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität10 µH | Sättigungsstrom 11.55 A | Sättigungsstrom @ 30%3 A | Gleichstromwiderstand0.322 Ω | Eigenresonanzfrequenz18 MHz | Performance Nennstrom1.65 A | MontageartSMT | Nennstrom1.2 A | Sättigungsstrom2.35 A | – | Gleichstromwiderstand280 mΩ | Betriebsspannung80 V | – | ||||
 | WE-MAIA SMT Speicherdrossel, 10 µH, 1.35 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAIA SMT Speicherdrossel | Induktivität10 µH | Sättigungsstrom 11.35 A | Sättigungsstrom @ 30%3 A | Gleichstromwiderstand0.513 Ω | Eigenresonanzfrequenz21 MHz | Performance Nennstrom1.25 A | MontageartSMT | – | – | – | Gleichstromwiderstand446 mΩ | – | – | ||||
| WE-MAIA SMT Speicherdrossel, 10 µH, 1.55 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAIA SMT Speicherdrossel | Induktivität10 µH | Sättigungsstrom 11.55 A | Sättigungsstrom @ 30%3 A | Gleichstromwiderstand0.322 Ω | Eigenresonanzfrequenz18 MHz | Performance Nennstrom1.65 A | MontageartSMT | – | – | – | Gleichstromwiderstand280 mΩ | – | – | ||||
 | WE-LQSH SMT Semi-Shielded High Saturation Power Inductor, 10 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Induktivität10 µH | – | – | Gleichstromwiderstand0.474 Ω | Eigenresonanzfrequenz21 MHz | – | MontageartSMT | Nennstrom0.85 A | Sättigungsstrom1.45 A | – | Gleichstromwiderstand395 mΩ | – | – |