IC-Hersteller Monolithic Power Systems

IC-Hersteller (104)

Monolithic Power Systems MPQ3524GDE-4000-AEC1 | Demoboard EVQ3524-D-4000-00A

20V, 4A Peak, Low Quiescent Current, Synchronous, Step-Down Converter Evaluation Board, AEC-Q100 Qualified

Details

TopologieAbwärtswandler
Eingangsspannung3.3-20 V
Ausgang 15 V / 4 A
IC-Revision1.0

Beschreibung

The EVQ3524-D-4000-00A evaluation board is designed to demonstrate the capabilities of the MPQ3524GDE-4000-AEC1, a configurable-frequency (350kHz to 2.5MHz), synchronous, step-down switching regulator with integrated, internal high-side and low-side MOSFETs (HS-FET and LS-FET, respectively).The MPQ3524GDE-4000-AEC1 provides up to 4A peak of highly efficient output current (IOUT) with peak current mode control. The wide 3.3V to 20V input voltage (VIN) range accommodates a variety of step-down applications in automotive input environments, such as 12V and 5V buses and multi-cell Li-ion batteries. A 1μA shutdown mode quiescent current (IQ) allows the device to be used in battery-powered applications.High power conversion efficiency across a wide load range is achieved by scaling down the switching frequency (fSW) under light loads to reduce switching and gate driver losses.An open-drain power good (PG) signal indicates whether the output is within 94.5% to 105.5% of its nominal voltage.Frequency foldback prevents inductor current (IL) runaway during start-up. Thermal shutdown provides reliable, fault-tolerant operation. A high duty cycle and low-dropout (LDO) mode are provided for automotive cold-crank conditions.The EVQ3524-D-4000-00A is fully assembled and tested. The MPQ3524GDE-4000-AEC1 is available in a QFN-12 (2mmx3mm) package with wettable flanks, and is AEC-Q100 qualified.

Eigenschaften

  • Designed for Automotive Applications
  • Continuous Operation Up to 20V
  • Supports Cold Crank Down to 3.1V
  • Low-Dropout Mode with Soft Recovery
  • 0.5A to 3A Continuous Output Current (IOUT) and 4A Peak IOUT Version in Pin Compatible Family
  • 65ns Minimum On Time (tON_MIN) and 50ns Minimum Off Time (tOFF_MIN)
  • Available in AEC-Q100 Grade 1
  • Increases Battery Life
  • 1μA Shutdown Supply Current
  • 20μA Sleep-Mode IQ
  • Advanced Asynchronous Modulation (AAM) Mode Increases Efficiency under Light Loads
  • Integrated 70mΩ High-Side MOSFET (HS-FET) and 50mΩ Low-Side MOSFET (LS-FET)
  • Optimized for EMC/EMI
  • CISPR 25 Class 5 Compliant
  • 350kHz to 2.5MHz Configurable fSW
  • Frequency Spread Spectrum (FSS) Modulation
  • Symmetric VIN Pinout
  • MeshConnect™ Flip-Chip Package
  • Additional Features
  • Power Good (PG) Output
  • Over-Current Protection (OCP) with Hiccup Mode
  • Fixed-Output Options (1): 1V, 1.8V, 2.5V, 3.0V, 3.3V, 3.8V, or 5V
  • Available in a QFN-12 (2mmx3mm) Package with Wettable Flanks
  • Functional Safety System Design Capablility
  • MPSafe™ Compatible: Functional Safety Supporting Document Available

Typische Anwendungen

  • Battery powered applications, Industrial Power Systems
  • Automotive Infotainment, Automotive Clusters, Advanced Driver-Assistance Systems (ADAS)

Weiterführende Informationen

Artikeldaten

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Artikel Nr.
Daten­blatt
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Status
Produktserie
C
Tol. C
VR(V (DC))
Bauform
Betriebstemperatur
Q
RISO
Keramiktyp
L(mm)
B(mm)
H(mm)
Fl(mm)
Verpackung
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(Ω)
Typ
MusterVerfügbarkeit & Muster
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SPECWCAP-CSGP MLCCs 50 V(DC), 10 pF, ±5%
Simu­lation
Verfügbarkeit
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Kapazität10 pF
Kapazität±5% 
Nennspannung50 V (DC)
Bauform0603 
Betriebstemperatur -55 °C up to +125 °C
Güte600 
Isolationswiderstand10 GΩ
KeramiktypNP0 Klasse I 
Länge1.6 mm
Breite0.8 mm
Höhe0.8 mm
Pad Dimension0.4 mm
Verpackung7" Tape & Reel 
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SPECWE-CBF SMT-Ferrit, –, –
Simu­lation
Verfügbarkeit
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Bauform0805 
Betriebstemperatur -55 °C up to +125 °C
Länge2 mm
Breite1.2 mm
Höhe0.9 mm
Pad Dimension0.5 mm
Impedanz @ 100 MHz60 Ω
Maximale Impedanz90 Ω
Maximale Impedanz500 MHz 
Nennstrom 23000 mA
Gleichstromwiderstand0.025 Ω
TypHochstrom 
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