IC-Hersteller MikroE

IC-Hersteller (103)

MikroE LAN8651B1 | Demoboard Two-Wire ETH 3 Click

LAN8651B1

Details

TopologieLAN / POE
Eingangsspannung3.3 V
IC-Revision1

Beschreibung

Two-Wire ETH 3 Click is a compact add-on board designed for single-pair Ethernet connectivity in industrial and embedded systems, providing 10BASE-T1S communication over a single balanced pair of conductors for long-reach and noise-resilient networking. The board is based on the LAN8651B1 single-port 10BASE-T1S MAC-PHY Ethernet controller with SPI interface from Microchip, developed in compliance with IEEE 802.3cg and OPEN Alliance TC-6 specifications. By integrating both MAC and PHY in a single low-power device, the LAN8651B1 allows low-cost MCUs to directly access 10BASE-T1S networks via a high-speed SPI interface, supporting 10Mbit/s half-duplex communication, cut-through data transfer for reduced latency, and industrial-grade EMC and EMI compliance. A key feature of this Click board is the inclusion of an industrially isolated output stage using a WE-STST signal transformer (74930030) from Würth Elektronik, ensuring high galvanic isolation, long-distance signal integrity, and PoE capability. This Click board is ideally suited for industrial automation, factory networking, building automation, and other applications requiring robust, long-reach Ethernet communication over single-pair cabling.

Eigenschaften

Single-port 10BASE-T1S MAC-PHY Ethernet controller with SPI interface, compliance with IEEE 802.3cg-2019 and OPEN Alliance TC-6 specifications, integrated MAC and PHY enabling direct MCU connection, 10Mbit/s half-duplex communication over a single balanced pair, industrial-grade galvanic isolation using a WE-STST signal transformer, long-reach and noise-resistant signal transmission, and more

Typische Anwendungen

  • Two-Wire communication

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
Datenrate
L(µH)
VT(V (RMS))
n
PoE
Betriebstemperatur
L(mm)
B(mm)
H(mm)
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(Ω)
Typ
Kanäle
Polarität
VCh max.(V)
ICh Leak max.(µA)
VBR min.(V)
CCh typ.(pF)
IPeak(A)
VCh Clamp ESD typ.(V)
VESD Contact(kV)
Muster
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Datenrate10/100/1GBase-T 
Induktivität350 µH
Prüfspannung1500 V (RMS)
Übersetzungsverhältnis1:1 
PoEPoE (bis zu 350 mA) 
Betriebstemperatur -40 °C up to +105 °C
Länge4.7 mm
Breite3.22 mm
Höhe2.9 mm
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Betriebstemperatur -55 °C up to +125 °C
Länge1.6 mm
Breite0.8 mm
Höhe0.8 mm
Impedanz @ 100 MHz300 Ω
Maximale Impedanz1500 Ω
Maximale Impedanz250 MHz 
Nennstrom 2750 mA
Gleichstromwiderstand0.35 Ω
TypHochgeschwindigkeit 
WE-TVS TVS Diode – Super Speed Series, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Betriebstemperatur -55 °C up to +85 °C
Länge1.2 mm
Breite1 mm
Höhe0.45 mm
Kanäle
PolaritätUnidirectional 
Kanal Betriebsspannung [max.]3.3 V
Kanal (Rück) Leckstrom [max.]0.5 µA
(Rückwärts-) Durchbruchspannung [min.]4.5 V
(Kanal) Eingangskapazität [typ.]0.18 pF
(Reverse) Peak Pulse Current3 A
Kanal ESD Klemmspannung [typ.]13 V
ESD Kontact-Entladungsfähigkeit8 kV