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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 1 |
Beschreibung
Microchip’s dsPIC33E family of digital signal controllers (DSCs) features a 70 MIPS dsPIC® DSC core with integrated DSP and enhanced on-chip peripherals. These DSCs enable the design of high-performance, precision motor control systems that are more energy efficient, quieter in operation, have a great range and extended life. They can be used to control brushless DC, permanent magnet synchronous, AC induction and stepper motors. These devices are also ideal for high-performance general purpose applications.
Eigenschaften
- Operating Conditions
- 3.0V to 3.6V, -40ºC to +85ºC, DC to 70 MIPS
- 3.0V to 3.6V, -40ºC to +125ºC, DC to 60 MIPS
- dsPIC33E DSC Core
- Modified Harvard Architecture
- C Compiler Optimized Instruction Set
- 16-bit Wide Data Path
- 24-bit Wide Instructions
- 16x16 Integer Multiply Operations
- 32/16 and 16/16 Integer Divide Operations
- Two 40-bit Accumulators with Rounding and Saturation Options
- Single-Cycle Multiply and Accumulate
- Single-Cycle shifts for up to 40-bit Data
- 16x16 Fractional Multiply/Divide Operations
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Material | LR(µH) | fres(MHz) | n | L(µH) | ∫Udt(µVs) | VT(V (DC)) | CWW 1(pF) | LS(µH) | Bauform | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCC SMT-Hochstrominduktivität, 32.5 A, 28.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCC SMT-Hochstrominduktivität | Performance Nennstrom32.5 A | Sättigungsstrom 128.5 A | Sättigungsstrom @ 30%55.1 A | Gleichstromwiderstand2.5 mΩ | MaterialEisenpulver | Nenninduktivität0.94 µH | Eigenresonanzfrequenz100 MHz | – | Induktivität1 µH | – | – | – | – | Bauform1210 | ||||
 | WE-GDT Gate-Drive-Übertrager, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-GDT Gate-Drive-Übertrager | – | – | – | – | – | – | – | Übersetzungsverhältnis1:1:1 | Induktivität260 µH | Spannung-µSekunde25.2 µVs | Prüfspannung1500 V (DC) | Koppelkapazität9 pF | Streuinduktivität1.7 µH | BauformEP5 |