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Overview
| Topology | Other Topology |
| IC revision | 1 |
Description
Microchip’s dsPIC33E family of digital signal controllers (DSCs) features a 70 MIPS dsPIC® DSC core with integrated DSP and enhanced on-chip peripherals. These DSCs enable the design of high-performance, precision motor control systems that are more energy efficient, quieter in operation, have a great range and extended life. They can be used to control brushless DC, permanent magnet synchronous, AC induction and stepper motors. These devices are also ideal for high-performance general purpose applications.
Features
- Operating Conditions
- 3.0V to 3.6V, -40ºC to +85ºC, DC to 70 MIPS
- 3.0V to 3.6V, -40ºC to +125ºC, DC to 60 MIPS
- dsPIC33E DSC Core
- Modified Harvard Architecture
- C Compiler Optimized Instruction Set
- 16-bit Wide Data Path
- 24-bit Wide Instructions
- 16x16 Integer Multiply Operations
- 32/16 and 16/16 Integer Divide Operations
- Two 40-bit Accumulators with Rounding and Saturation Options
- Single-Cycle Multiply and Accumulate
- Single-Cycle shifts for up to 40-bit Data
- 16x16 Fractional Multiply/Divide Operations
Products
Order Code | Datasheet | Simulation | Downloads | Status | Product series | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Material | LR(µH) | fres(MHz) | n | L(µH) | ∫Udt(µVs) | VT(V (DC)) | CWW 1(pF) | LS(µH) | Size | Samples | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCC SMT High Current Cube Inductor, 32.5 A, 28.5 A | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-HCC SMT High Current Cube Inductor | Performance Rated Current32.5 A | Saturation Current @ 10%28.5 A | Saturation Current @ 30%55.1 A | DC Resistance2.5 mΩ | MaterialIron Powder | Rated Inductance0.94 µH | Self Resonant Frequency100 MHz | – | Inductance1 µH | – | – | – | – | Size1210 | ||||
 | WE-GDT Gate-Drive-Transformer, –, – | Simulation– | Status Activei| Production is active. Expected lifetime: >10 years. | Product seriesWE-GDT Gate-Drive-Transformer | – | – | – | – | – | – | – | Turns Ratio1:1:1 | Inductance260 µH | Voltage-µSecond25.2 µVs | Insulation Test Voltage1500 V (DC) | Interwinding Capacitance9 pF | Leakage Inductance1.7 µH | SizeEP5 |