IC-Hersteller Microchip

IC-Hersteller (103)

Microchip dsPIC33CH | Demoboard Digital power kit (Controller board)

Details

TopologieSonstige Topologie
IC-Revision4

Beschreibung

Simplified firmware development with dual independent coresDual cores and peripheral sets facilitate robust systems and improve functional safetyFirst dsPIC33 with CAN-FD for robust communication with increased bandwidthMaximum analog integration including high-speed ADCs, DACs with waveform generation, analog comparators and PGAs for increased functionality in less spaceLive update of firmware for high-availability systems, especially important for power supplies

Eigenschaften

  • Master/Slave Core Operation
  • Independent Peripherals for Master Core andSlave Core
  • Dual Partition for Slave PRAM LiveUpdate
  • Configurable Shared Resources for Master Core and Slave Core
  • Master Core with 64-128 Kbytes of ProgramFlash with ECC and 16K RAM
  • Slave Core with 24 Kbytes of Program RAM(PRAM) with ECC and 4K Data Memory RAM
  • Fast 6-Cycle Divide
  • Message Boxes and FIFO to CommunicateBetween Master and Slave (MSI)
  • Code Efficient (C and Assembly) Architecture
  • 40-Bit Wide Accumulators
  • Single-Cycle (MAC/MPY) with Dual Data Fetch
  • Single-Cycle, Mixed-Sign MUL Plus HardwareDivide
  • 32-Bit Multiply Support
  • Five Sets of Interrupt Context Selected Registers and Accumulators per Core for Fast Interrupt Response
  • Zero Overhead Looping

Typische Anwendungen

  • motor control
  • high-performance digital power
  • high-end embedded applications

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
Wicklungstyp
L(µH)
Z @ 100 MHz(Ω)
IR(mA)
RDC max.(Ω)
VR(V)
VT(V (AC))
Kanäle
Polarität
VCh max.(V)
ICh Leak max.(µA)
VBR min.(V)
CCh typ.(pF)
IPeak(A)
VCh Clamp ESD typ.(V)
VESD Contact(kV)
Muster
WE-CNSW Stromkompensierter SMT Line Filter, bifilar, 0.134 µH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Wicklungstypbifilar 
Induktivität0.134 µH
Impedanz @ 100 MHz90 Ω
Nennstrom550 mA
Gleichstromwiderstand0.145 Ω
Nennspannung50 V
Prüfspannung125 V (AC)
WE-TVS TVS Diode – High Speed Series, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Kanäle2+1 
PolaritätUnidirectional 
Kanal Betriebsspannung [max.]5 V
Kanal (Rück) Leckstrom [max.]1 µA
(Rückwärts-) Durchbruchspannung [min.]6 V
(Kanal) Eingangskapazität [typ.]2 pF
(Reverse) Peak Pulse Current6 A
Kanal ESD Klemmspannung [typ.]10 V
ESD Kontact-Entladungsfähigkeit8 kV