IC-Hersteller Microchip

IC-Hersteller (103)

Microchip SAM9X6 | Demoboard MCP16502

Details

TopologieAbwärtswandler
Eingangsspannung2.7-5.5 V
Ausgang 11.8 V / 1 A
IC-Revision1

Beschreibung

The SAM9X60 is a high-performance, ultra-low-power ARM926EJ-S CPU-based embedded microprocessor (MPU) running up to 600 MHz. The SAM9X60 supports various memory interfaces, including 16-bit LPDDR/DDR2, 32-bit LPSDR/SDRAM, NAND flash, Quad SPI and eMMC Flash. The device integrates powerful peripherals for connectivity and user interface applications . It offers State-of-the-Art security functions such as Secure Boot capability with on-chip secure key storage (OTP), high-performance crypto accelerators (SHA, AES and TDES) as well as tamper pins.Microchips offers for different supply and DRAM configurations, fully tested power management solutions respecting the SAM9X60 power sequencing specifications. Go to Treelinktool under DC/DC converters and SAM9X60 for further information.

Eigenschaften

  • Input Voltage: 2.7V to 5.5V
  • Four 1A Output Current Buck Channels with 100% Maximum Duty Cycle Capability
  • 2 MHz Buck Channels PWM Operation
  • Two Auxiliary 300 mA Low-Dropout Linear Regulators (LDOs)
  • ±1% Voltage Accuracy for DDR (Buck2 Output), Core (Buck3 Output) and CPU (Buck4 Output)
  • Pin-Selectable Output Voltages for Buck2: 1.2V, 1.35V, 1.8V
  • MPU-Specific Built-in Default Channel Sequencing and nRSTO Assertion Delay
  • Support of Hibernate, Low-Power and High-Performance Modes with DVS
  • Push Button Long Press Time-out Function
  • 1MHz I2C Interface for Programming and Diagnostics
  • Low Noise, Forced PWM (FPWM) and Low IQ- Light Load, High-Efficiency Mode Available
  • C-Selectable Displacement (±16.5%) of PWM Switching Frequency
  • Leakage-Free Interfacing to MPU in Any Operating Condition through Optimized ESD Protection
  • Less than 300 μA Low-Power Mode TypicalQuiescent Current Bucks and LDO1 On, No Load
  • 10 μA Maximum Shutdown Current (VIN=4.5V, TJ= +105°C)
  • Cost and Size-Optimized BOM
  • Thermal Shutdown and Current Limit Protection
  • User-Programmable Overcurrent Fault Response
  • 32-Pin 5 mm × 5 mm VQFN Package
  • -40°C to +125°C Junction Temperature Range
  • AEC-Q100 Grade 2 (TAMB = +105°C) Qualified

Typische Anwendungen

  • High-Performance MPUs Power Supply Solutions / μC/μP, FPGA and DSP Power

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IR(A)
ISAT(A)
RDC(mΩ)
fres(MHz)
RDC max.(mΩ)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
VOP(V)
Montageart
Muster
WE-LQS SMT-Speicherdrossel, 1.5 µH, 1.8 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1.5 µH
Nennstrom1.8 A
Sättigungsstrom2.2 A
Gleichstromwiderstand65 mΩ
Eigenresonanzfrequenz104 MHz
Betriebsspannung120 V
MontageartSMT 
WE-MAPI SMT-Speicherdrossel, 1.5 µH, 2.2 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1.5 µH
Nennstrom2.2 A
Sättigungsstrom3.7 A
Eigenresonanzfrequenz60 MHz
Gleichstromwiderstand99 mΩ
Performance Nennstrom3.05 A
Sättigungsstrom @ 30%4.7 A
Gleichstromwiderstand82 mΩ
Betriebsspannung80 V
MontageartSMT 
WE-MAPI SMT-Speicherdrossel, 2.2 µH, 1.6 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2.2 µH
Nennstrom1.6 A
Sättigungsstrom2.9 A
Eigenresonanzfrequenz57 MHz
Gleichstromwiderstand141 mΩ
Performance Nennstrom2.45 A
Sättigungsstrom @ 30%3.65 A
Gleichstromwiderstand123 mΩ
Betriebsspannung80 V
MontageartSMT 
WE-LQSH SMT Semi-Shielded High Saturation Power Inductor, 2.2 µH, 1.6 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2.2 µH
Nennstrom1.6 A
Sättigungsstrom3 A
Eigenresonanzfrequenz46 MHz
Gleichstromwiderstand120 mΩ
Gleichstromwiderstand100 mΩ
MontageartSMT