| Topologie | Sonstige Topologie |
| Schaltfrequenz | 80-120 kHz |
HV9910C is an open-loop, current-mode control, LED driver IC. This IC can be programmed to operate in either a constant frequency or constant off-time mode. It includes a 15 – 450V linear regulator which allows it to work with a wide range of input voltages without the need for an external low voltage supply. HV9910C includes a TTL-compatible, PWM-dimming input thatcan accept an external control signal with a duty ratio of 0 – 100% and a frequency of up to a few kilohertz. It also includes a 0 – 250mV linear-dimming input which can be used for linear dimming of the LED current.Unlike the HV9910B, the HV9910C is equipped with built-in thermal-shutdown protection.
HV9910C is ideally suited for buck LED drivers. Since the HV9910C operates in open-loop current mode control, the controller achieves good output current regulation without the need for any loop compensation. Also,being an open-loop controller, PWM-dimming response is limited only by the rate of rise of the inductor current, enabling a very fast rise and fall times of the LED current. HV9910C requires only three external components (apart from the power stage) to produce a controlled LED current. This makes HV9910C an ideal solution for low-cost LED drivers.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | IR(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PD SMT-Speicherdrossel, 680 µH, 1.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität680 µH | Performance Nennstrom1.1 A | – | Gleichstromwiderstand930 mΩ | Eigenresonanzfrequenz2.2 MHz | Bauform1280 | VersionGestanzt | – | ||||
![]() | WE-PD HV SMT Speicherdrossel (High Voltage), 2200 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD HV SMT Speicherdrossel (High Voltage) | Induktivität2200 µH | – | Sättigungsstrom0.65 A | Gleichstromwiderstand3700 mΩ | Eigenresonanzfrequenz0.8 MHz | Bauform1210 | – | Nennstrom0.43 A |