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Details
| Topologie | FPGA |
| IC-Revision | 1.00 |
Beschreibung
- Sulfur Development Kit is worked with system-on-module (SOM) of mass production quality - The SOM used in the evaluation can be directly incorporated into the system!! - Provides a "evaluable" reference design from the day it is received. - Expands sensor interfaces primarily for industrial and robotics applications (Can be supported with Group B device) - HPS: 1G ethernet, USB_UART, USB3.1/2.0 - FPGA: PCIe Gen3x4, 10G SFP+, MIPI CSI-2, SLVS-EC, HDMI 2.0, Ethernet x2, CXP 2.0, Cameralink, CAN, External pin header - Supports 25G Ethernet for medical and broadcast equipment applications (Supported with Group A device in a future) - HPS: 1G ethernet, USB_UART, USB3.1/2.0 - FPGA: PCIe Gen4x4, 10G SFP+, 25G SFP28, HDMI 2.0 x2, Ethernet x2, SDI(TBD), External pin header
Typische Anwendungen
- FPGA
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MAPI SMT-Speicherdrossel, 0.33 µH, 8.7 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität0.33 µH | Performance Nennstrom8.7 A | Sättigungsstrom @ 30%10.5 A | Gleichstromwiderstand14 mΩ | Eigenresonanzfrequenz140 MHz | Betriebsspannung80 V | MontageartSMT | ||||
 | WE-MAPI SMT-Speicherdrossel, 0.68 µH, 3.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität0.68 µH | Performance Nennstrom3.3 A | Sättigungsstrom @ 30%5.9 A | Gleichstromwiderstand65 mΩ | Eigenresonanzfrequenz130 MHz | Betriebsspannung80 V | MontageartSMT | ||||
 | WE-MAPI SMT-Speicherdrossel, 1 µH, 3.55 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom3.55 A | Sättigungsstrom @ 30%5.3 A | Gleichstromwiderstand63 mΩ | Eigenresonanzfrequenz80 MHz | Betriebsspannung80 V | MontageartSMT |