IC-Hersteller Intel

IC-Hersteller (103)

Intel PEF98030

Lantiq™ FALC™ ON FTTx System-on-Chip Family

Details

TopologieSonstige Topologie

Beschreibung

The Lantiq™ FALC™ ON FTTx family of GPON ONU ICs is a scalable, highly integrated, cost- optimized and low-power system-on-chip solution that can be used in all FTTx deployment scenarios. The ICs provide an intelligent and cost-effective solution for managing the optical interface. In fact, the overall optical system performance exceeds the levels defi ned by the ITU-T G.984.2 standard.The optical side of a FALC™ ON FTTx device directly connects to a Bi-Directional Optical Sub- Assembly (BiDi OSA/BOSA) component, a photonic IC, or an optical transceiver module. The client side provides up to four GE interfaces for data traffi c. Integrated 10/100/1000BASE-T Ethernet PHY modules on the SoC enable direct interfacing with standard magnetics for two 1000BASE-T or four 10/100BASE-T links. On-chip voice processing, used with external SLIC devices, allows up to four FXS ports to be enabled. The comprehensive SoC design includes a burst-mode laser driver, post amplifi er and clock and data recovery, as well as a GPON ONU MAC and an on-chip CPU.

Eigenschaften

  • System-on-Chip (SoC) for GPON Optical Network Termination (ONU)
  • ITU-T G.984-compliant GPON TC sublayer
  • Flexible optical interfaces for Bi-Directional Optical Sub-Assembly (BiDiOSA/BOSA) components or optical transceivermodules
  • Integrated burst-mode laser driver and APD/PIN receiver
  • Flexible L2-L4 packet processing engine with extensive traffi c management functionality, compliant with the BroadbandForum TR-156, G.984.4/G.988 and Metro Ethernet Forum Implementation Agreement #10 specifi cations
  • Real GPON wire-speed packet processing with throughput independent of packet size and CPU application processing
  • Four triple-speed Ethernet ports
  • Two integrated 10/100/1000BASE-T Ethernet PHY modules supporting Energy-Effi cient Ethernet (EEE)
  • SGMII interface operating at 1 Gbit/s or 2.5 Gbit/s
  • Dual RGMII/RMII or single GMII/MII/TMII interface
  • Up to four integrated voice codecs with SLIC™ interface

Typische Anwendungen

  • Cellular Backhaul Unit (CBU)
  • Small Business Unit (SBU)
  • Multi-Dwelling Unit (MDU
  • Home Gateway Unit (HGU)
  • Single Family Unit (SFU)

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IR(A)
ISAT(A)
fres(MHz)
Montageart
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
Q(%)
Muster
WE-LHMI SMT Speicherdrossel, 1 µH, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität1 µH
Eigenresonanzfrequenz51 MHz
MontageartSMT 
Performance Nennstrom13.4 A
Sättigungsstrom 113 A
Sättigungsstrom @ 30%25.8 A
Gleichstromwiderstand6.5 mΩ
WE-TPC SMT-Speicherdrossel, 10 µH, 1.6 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität10 µH
Nennstrom1.6 A
Sättigungsstrom1.4 A
Eigenresonanzfrequenz35 MHz
MontageartSMT 
Gleichstromwiderstand70 mΩ
WE-LQ SMT-Induktivität, 12 µH, 0.29 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität12 µH
Nennstrom0.29 A
Sättigungsstrom0.78 A
Eigenresonanzfrequenz18 MHz
MontageartSMT 
Gleichstromwiderstand700 mΩ
Güte35 %
WE-TPC SMT-Speicherdrossel, 12 µH, 1.12 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität12 µH
Nennstrom1.12 A
Sättigungsstrom0.95 A
Eigenresonanzfrequenz30 MHz
MontageartSMT 
Gleichstromwiderstand125 mΩ
WE-TPC SMT-Speicherdrossel, 22 µH, 1.15 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität22 µH
Nennstrom1.15 A
Sättigungsstrom0.9 A
Eigenresonanzfrequenz20 MHz
MontageartSMT 
Gleichstromwiderstand120 mΩ
750510652
–, 470 µH, –
Simu­lation
Downloads
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Produktserie
Induktivität470 µH
MontageartSMT