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Details
| Topologie | FPGA |
| IC-Revision | 0C |
Beschreibung
FPGAThe Cyclone V GX FPGA development board provides a hardware platform fordeveloping and prototyping low-power, high-performance, and logic-intensivedesigns using Altera’s Cyclone V GX FPGA device. The board provides a wide rangeof peripherals and memory interfaces to facilitate the development of Cyclone V GXdesigns.One high-speed mezzanine card (HSMC) connectors are available to add additionalfunctionality via a variety of HSMCs available from Altera® and various partners.
Eigenschaften
- Cyclone V E FPGAs with logic only
- Cyclone V GX FPGAs with 3.125 Gbps transceivers
- Cyclone V GT FPGAs with 6.144 Gbps transceivers
- Cyclone V SE SoCs with ARM-based hard processor system (HPS) and logic
- Cyclone V SX SoCs with ARM-based HPS and 3.125 Gbps transceivers
- Cyclone V ST SoCs with ARM-based HPS and 6.144 Gbps transceivers
Typische Anwendungen
- Mobile backhaul, remote radio heads, picocell / Access routers, control plane / Capture cards, video conversion
- Infotainment, drive assistance, battery management
- Displays
- Industrial networking, motor control
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | fres(MHz) | Bauform | Version | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | Material | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(mΩ) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 0.52 µH, 19.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.52 µH | Performance Nennstrom19.2 A | – | Eigenresonanzfrequenz140 MHz | Bauform7030 | VersionSMT | Sättigungsstrom 18.5 A | Sättigungsstrom @ 30%20 A | Gleichstromwiderstand3.7 mΩ | MaterialSuperflux | – | – | – | – | Gleichstromwiderstand4.07 mΩ | – | ||||
 | WE-PD SMT-Speicherdrossel, 2.2 µH, 6.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität2.2 µH | Performance Nennstrom6.9 A | Sättigungsstrom6.5 A | Eigenresonanzfrequenz60 MHz | Bauform7345 | VersionGestanzt | Sättigungsstrom 16.5 A | Sättigungsstrom @ 30%8 A | – | – | – | – | – | – | Gleichstromwiderstand20 mΩ | – | ||||
| WE-HCI SMT-Hochstrominduktivität, 2.2 µH, 10.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2.2 µH | Performance Nennstrom10.2 A | – | Eigenresonanzfrequenz52 MHz | Bauform7040 | VersionSMT | Sättigungsstrom 15.6 A | Sättigungsstrom @ 30%13 A | Gleichstromwiderstand11.4 mΩ | MaterialSuperflux | – | – | – | – | Gleichstromwiderstand12.54 mΩ | – | ||||
| WE-HCI SMT-Hochstrominduktivität, 6.5 µH, 6.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität6.5 µH | Performance Nennstrom6.6 A | – | Eigenresonanzfrequenz50 MHz | Bauform7050 | VersionSMT | Sättigungsstrom 12 A | Sättigungsstrom @ 30%6 A | Gleichstromwiderstand21.5 mΩ | MaterialSuperflux | – | – | – | – | Gleichstromwiderstand23.65 mΩ | – | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | Bauform0603 | VersionSMT | – | – | – | – | Impedanz @ 100 MHz30 Ω | Maximale Impedanz40 Ω | Maximale Impedanz1000 MHz | Nennstrom 23000 mA | Gleichstromwiderstand40 mΩ | TypHochstrom | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | Bauform0805 | VersionSMT | – | – | – | – | Impedanz @ 100 MHz33 Ω | Maximale Impedanz58 Ω | Maximale Impedanz800 MHz | Nennstrom 24000 mA | Gleichstromwiderstand8 mΩ | TypHochstrom |